2N6784JANTX International Rectifier Corp., 2N6784JANTX Datasheet

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2N6784JANTX

Manufacturer Part Number
2N6784JANTX
Description
TO205/200V SINGLE N-CHANNEL HI-REL MOSFET
Manufacturer
International Rectifier Corp.
Datasheet

Specifications of 2N6784JANTX

Lead_time
70
Pack_quantity
1
Comm_code
85412900
Eccn
EAR99
REPETITIVE A V ALANCHE AND dv/dt RATED
HEXFET TRANSISTORS
THRU-HOLE (TO-205AF)
Product Summary
The HEXFET technology is the key to International
Rectifier’s advanced line of power MOSFET transistors.
The efficient geometry and unique processing of this latest
“State of the Art” design achieves: very low on-state resis-
tance combined with high transconductance.
The HEXFET transistors also feature all of the well
established advantages of MOSFETs such as volt-
age control, very fast switching, ease of parelleling
and temperature stability of the electrical parameters.
They are well suited for applications such as switch-
ing power supplies, motor controls, inverters, chop-
pers, audio amplifiers and high energy pulse circuits.
For footnotes refer to the last page
Absolute Maximum Ratings
I D @ V GS = 10V, T C = 100°C
I D @ V GS = 10V, T C = 25°C
www.irf.com
Part Number
IRFF210
P D @ T C = 25°C
T STG
dv/dt
I DM
E AR
E AS
V GS
I AR
T J
BVDSS
200V
R
1.5
DS(on)
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
2.25A
I
D
300 (0.063 in. (1.6mm) from case for 10s)
Features:
n
n
n
n
n
REF:MIL-PRF-19500/556
Repetitive Avalanche Ratings
Dynamic dv/dt Rating
Hermetically Sealed
Simple Drive Requirements
Ease of Paralleling
0.98(typical)
-55 to 150
200V, N-CHANNEL
2.25
1.50
0.12
±20
9.0
5.0
1 5
4 8
JANTXV2N6784
TO-39
JANTX2N6784
IRFF210
PD - 90424C
Units
W/°C
V/ns
o
mJ
mJ
W
A
A
V
g
C
01/22/01
1

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