AUIRFP2602 International Rectifier Corp., AUIRFP2602 Datasheet

AUIRFP2602

Manufacturer Part Number

AUIRFP2602

Description

TO247AUTOMOTIVE MOSFET 24V, 180A, 1.6 MOHM, 260 NC QG, TO-247

Manufacturer

International Rectifier Corp.

Datasheet

1.AUIRFP2602.pdf (10 pages)

Specifications of AUIRFP2602

Lead_time

Pack_quantity

Comm_code

85412900

Eccn

EAR99

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

AUIRFP2602

Manufacturer:

Quantity:

12 500

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Description

Specifically designed for Automotive applications,

this HEXFET

processing techniques to achieve extremely low on-

resistance per silicon area. Additional features of

this design are a 175°C junction operating

temperature, fast switching speed and improved

repetitive avalanche rating . These features combine

to make this design an extremely efficient and

reliable device for use in Automotive applications

and a wide variety of other applications.

Features

Absolute Maximum Ratings

in the specifications is not implied.

www.irf.com

HEXFET

*Qualification standards can be found at http://www.irf.com/

Thermal Resistance

STG

θJC

θCS

θJA

@ T

Advanced Process Technology

Low On-Resistance

175°C Operating Temperature

Fast Switching

Repetitive Avalanche Allowed up to Tjmax

Lead-Free, RoHS Compliant

Automotive Qualified *

(Tested )

= 25°C

= 100°C

= 25°C

is a registered trademark of International Rectifier.

Power MOSFET utilizes the latest

Continuous Drain Current, V

Pulsed Drain Current

Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy (Thermally limited)

Single Pulse Avalanche Energy Tested Value

Avalanche Current

Repetitive Avalanche Energy

Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 seconds

Mounting Torque, 6-32 or M3 screw

Junction-to-Case

Case-to-Sink, Flat, Greased Surface

Junction-to-Ambient (PCB Mount, steady state)

functional operation of the device at these or any other condition beyond those indicated

Parameter

AUTOMOTIVE GRADE

@ 10V (Silicon Limited)

@ 10V (Package Limited)

G a te

Typ.

TO-247AD

AUIRFP2602

See Fig.17a, 17b, 14, 15

300 (1.6mm from case )

0.24

–––

HEXFET

10 lbf

D ra in

-55 to + 175

Max.

380

270

in (1.1N

1580

1011

180

380

± 20

400

2.5

D (Silicon Limited)

D (Package Limited)

(BR)DSS

DS(on)

Max.

Power MOSFET

0.40

–––

typ.

max. 1.6m Ω

S o u rc e

PD - 96420

Units

1.25m Ω

11/17/11

380A

W/°C

°C/W

180A

°C

24V

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