AUIRFU1010Z International Rectifier Corp., AUIRFU1010Z Datasheet

AUIRFU1010Z

Manufacturer Part Number

AUIRFU1010Z

Description

IPAKAUTOMOTIVE MOSFET 55V,91A, 7.5 MOHM, 63 NC QG, IPAK

Manufacturer

International Rectifier Corp.

Datasheet

1.AUIRFR1010Z.pdf (13 pages)

Specifications of AUIRFU1010Z

Lead_time

Pack_quantity

Comm_code

85412900

Eccn

EAR99

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Features

●

Description

Specifically designed for Automotive applications,

this HEXFET

processing techniques to achieve extremely low

on-resistance per silicon area. Additional features

of this design

temperature, fast switching speed and improved

repetitive avalanche rating . These features com-

bine to make this design an extremely efficient and

reliable device for use in Automotive applications

and a wide variety of other applications.

HEXFET

*Qualification standards can be found at http://www.irf.com/

www.irf.com

Absolute Maximum Ratings

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These

are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in

the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device

reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.

Ambient temperature (T

Thermal Resistance

STG

@ T

Advanced Process Technology

Low On-Resistance

175°C Operating Temperature

Fast Switching

Repetitive Avalanche Allowed up to Tjmax

Lead-Free, RoHS Compliant

Automotive Qualified *

(tested )

= 25°C Continuous Drain Current, V

= 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited)

= 25°C Continuous Drain Current, V

= 25°C Power Dissipation

is a registered trademark of International Rectifier.

Power MOSFET utilizes the latest

are a 175°C junction operating

Pulsed Drain Current

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy (Thermally limited)

Single Pulse Avalanche Energy Tested Value

Avalanche Current

Repetitive Avalanche Energy

Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 seconds (1.6mm from case )

Junction-to-Case

Junction-to-Ambient (PCB mount)

Junction-to-Ambient

) is 25°C, unless otherwise specified.

AUTOMOTIVE GRADE

Parameter

@ 10V (Silicon Limited)

@ 10V (Package Limited)

Gate

AUIRFR1010Z

HEXFET

AUIRFR1010Z

See Fig.12a, 12b, 15, 16

D (Silicon Limited)

D (Package Limited)

DSS

DS(on)

Typ.

D-Pak

–––

Drain

-55 to + 175

Max.

360

140

± 20

110

220

300

0.9

typ.

max.

Power MOSFET

Max.

1.11

110

Source

PD - 97683

5.8m

7.5m

42A

55V

91A

Units

W/°C

°C/W

°C

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