IRFR812PBF International Rectifier Corp., IRFR812PBF Datasheet

IRFR812PBF

Manufacturer Part Number

IRFR812PBF

Description

DPAK/MOSFET, 500V, 3.5A, 2.2 OHM, MOTIRFET

Manufacturer

International Rectifier Corp.

Datasheet

1.IRFR812PBF.pdf (9 pages)

Specifications of IRFR812PBF

Lead_time

Pack_quantity

Comm_code

85412900

Eccn

EAR99

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Meier Automation Equipment Co., Limited

Part Number:

IRFR812PBF

Manufacturer:

Quantity:

20 000

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Notes through

Applications

•

Features and Benefits

•

dv/dt

Absolute Maximum Ratings

Diode Characteristics

RRM

www.irf.com

STG

@ T

Symbol

= 25°C Continuous Drain Current, V

= 100°C Continuous Drain Current, V

= 25°C Power Dissipation

Pulsed Drain Current

Linear Derating Factor

Gate-to-Source Voltage

Peak Diode Recovery dv/dt

Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 seconds

Mounting torque, 6-32 or M3 screw

Continuous Source Current

(Body Diode)

Pulsed Source Current

(Body Diode)

Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge

Reverse Recovery Current

Forward Turn-On Time

‡

Parameter

are on page 2

Parameter

@ 10V

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Min. Typ. Max. Units

–––

––– 14.4

–––

135

220

3.2

300 (1.6mm from case )

500V

110

140

200

330

3.6

1.2

4.8

DSS

10lb

IRFR812TRPbF

-55 to + 150

Max.

14.4

0.63

in (1.1N

± 20

3.6

2.3

nC T

HEXFET Power MOSFET

DS(on)

MOSFET symbol

showing the

integral reverse

p-n junction diode.

di/dt = 100A/μs

1.85Ω

= 125°C, di/dt = 100A/μs

= 25°C, I

Conditions

typ.

= 3.6A

= 3.6A, V

IRFR812TRPbF

Trr

75ns

D-Pak

typ.

PD -97773

Units

= 0V

W/°C

V/ns

°C

3.6A

4/10/12

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