TP2510N8 Supertex, TP2510N8 Datasheet

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TP2510N8

Manufacturer Part Number
TP2510N8
Description
Manufacturer
Supertex
Datasheets

Specifications of TP2510N8

Case
SOT-89
Date_code
07+

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
TP2510N8
Manufacturer:
SUPERTEX
Quantity:
20 000
Part Number:
TP2510N8-G
Manufacturer:
MICROCHIP
Quantity:
12 000
Part Number:
TP2510N8-G
0
Ordering Information
* Same as SOT-89. Product supplied on 2000 piece carrier tape reels.
-G indicates package is RoHS compliant (’Green’)
Features
Applications
Absolute Maximum Ratings
Drain-to-Source Voltage
Drain-to-Gate Voltage
Gate-to-Source Voltage
Operating and Storage Temperature
Soldering Temperature*
*
11/10/05
Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability
indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to
workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the
Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.
MIL visual screening available.
Distance of 1.6 mm from case for 10 seconds.
Low threshold — -2.4V max.
High input impedance
Low input capacitance — 125pF max.
Fast switching speeds
Low on resistance
Free from secondary breakdown
Low input and output leakage
Complementary N- and P-channel devices
Logic level interfaces – ideal for TTL and CMOS
Solid state relays
Battery operated systems
Photo voltaic drives
Analog switches
General purpose line drivers
Telecom switches
BV
BV
-100V
DSS
DGS
/
R
(max)
3.5Ω
DS(ON)
V
(max)
-2.4V
GS(th)
-55°C to +150°C
P-Channel Enhancement-Mode
Vertical DMOS FETs
(min)
-1.5A
I
BV
D(ON)
BV
300°C
± 20V
DGS
DSS
1
TP2510N8
Low Threshold DMOS Technology
These low threshold enhancement-mode (normally-off) tran-
sistors utilize a vertical DMOS structure and Supertex's well-
proven silicon-gate manufacturing process. This combination
produces devices with the power handling capabilities of bipolar
transistors and with the high input impedance and positive
temperature coefficient inherent in MOS devices. Characteristic
of all MOS structures, these devices are free from thermal
runaway and thermally-induced secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide
range of switching and amplifying applications where very low
threshold voltage, high breakdown voltage, high input imped-
ance, low input capacitance, and fast switching speeds are de-
sired.
Package Option
Note: See Package Outline section for dimensions.
TO-243AA*
Order Number / Package
G
TP2510N8-G
D
S
TO-243AA
(SOT-89)
Where
Product marking for TO-243AA
Low Threshold
TP2510ND
Die
= 2-week alpha date code
TP5A
D
TP2510

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