TP2502N8 Supertex, TP2502N8 Datasheet
TP2502N8
Manufacturer Part Number
TP2502N8
Description
Manufacturer
Supertex
Specifications of TP2502N8
Case
SOT-89
Date_code
07+
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Ordering Information
*
†
Features
❏ Low threshold — -2.4V max.
❏ High input impedance
❏ Low input capacitance — 125pF max.
❏ Fast switching speeds
❏ Low on resistance
❏ Free from secondary breakdown
❏ Low input and output leakage
❏ Complementary N- and P-channel devices
Applications
❏ Logic level interfaces – ideal for TTL and CMOS
❏ Solid state relays
❏ Battery operated systems
❏ Photo voltaic drives
❏ Analog switches
❏ General purpose line drivers
❏ Telecom switches
Absolute Maximum Ratings
Drain-to-Source Voltage
Drain-to-Gate Voltage
Gate-to-Source Voltage
Operating and Storage Temperature
Soldering Temperature*
*
11/12/01
Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability
indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to
workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the
Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.
MIL visual screening available.
Same as SOT-89. Product supplied on 2000 piece carrier tape reels.
Distance of 1.6 mm from case for 10 seconds.
BV
BV
-20V
DSS
DGS
/
R
(max)
2.0Ω
DS(ON)
V
(max)
-2.4V
GS(th)
P-Channel Enhancement-Mode
Vertical DMOS FETs
-55°C to +150°C
(min)
-2.0A
I
BV
D(ON)
BV
300°C
± 20V
DGS
DSS
1
TO-243AA*
TP2502N8
Order Number / Package
Low Threshold DMOS Technology
These low threshold enhancement-mode (normally-off) power
transistors utilize a vertical DMOS structure and Supertex's well-
proven silicon-gate manufacturing process. This combination
produces devices with the power handling capabilities of bipolar
transistors and with the high input impedance and positive
temperature coefficient inherent in MOS devices. Characteristic
of all MOS structures, these devices are free from thermal
runaway and thermally induced secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where very low threshold
voltage, high breakdown voltage, high input impedance, low input
capacitance, and fast switching speeds are desired.
Package Option
Where ❋ = 2-week alpha date code
Product marking for TO-243AA
Note: See Package Outline section for dimensions.
TP5L❋
TP2502ND
Die
†
G
TO-243AA
(SOT-89)
D
S
Low Threshold
D
TP2502
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