SST28LF040 Silicon Storage Technology, Inc, SST28LF040 Datasheet

SST28LF040

Manufacturer Part Number

SST28LF040

Description

Manufacturer

Silicon Storage Technology, Inc

Datasheet

1.SST28LF040.pdf (24 pages)

Specifications of SST28LF040

Case

TSOP

Date_code

06+

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Bonase Electronics (HK) Co., Limited

Part Number:

SST28LF040-200-4C-NH

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SST

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BOSTOCK HK LIMITED

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SST28LF040-200-4C-NH

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FEATURES:

• Single Voltage Read and Write Operations

• Superior Reliability

• Memory Organization: 512K x 8

• Sector Erase Capability: 256 bytes per Sector

• Low Power Consumption

• Fast Sector Erase/Byte Program Operation

PRODUCT DESCRIPTION

The 28SF040/28LF040/28VF040 are 512K x 8 bit

CMOS sector erase, byte program EEPROMs. The

28SF040/28LF040/28VF040 are manufactured using

SST’s proprietary, high performance CMOS SuperFlash

EEPROM Technology. The split gate cell design and

thick oxide tunneling injector attain better reliability and

manufacturability compared with alternative ap-

proaches. The 28SF040/28LF040/28VF040 erase and

program with a single power supply. The 28SF040/

28LF040/28VF040 conform to JEDEC standard pinouts

for byte wide memories and are compatible with existing

industry standard EPROM, flash EPROM and EEPROM

pinouts.

Featuring high performance programming, the

28SF040/28LF040/28VF040 typically byte program in

35 µs. The 28SF040/28LF040/28VF040 typically sector

erase in 2 ms. Both program and erase times can be

optimized using interface features such as Toggle bit or

Data# Polling to indicate the completion of the write

cycle. To protect against an inadvertent write, the

28SF040/28LF040/28VF040 have on chip hardware

and software data protection schemes. Designed,

manufactured, and tested for a wide spectrum of applica-

tions, the 28SF040/28LF040/28VF040 are offered with a

guaranteed sector endurance of 10

retention is rated greater than 100 years.

310-04 12/97

– 5.0V-only for the 28SF040

– 3.0V-only for the 28LF040

– 2.7V-only for the 28VF040

– Endurance: 100,000 Cycles (typical)

– Greater than 100 years Data Retention

– Active Current: 15 mA (typical) for 5.0V and

– Standby Current: 5 µA (typical)

– Byte Program Time: 35 µs (typical)

– Sector Erase Time: 2 ms (typical)

– Complete Memory Rewrite: 20 sec (typical)

10 mA (typical) for 3.0/2.7V

4 Megabit (512K x 8) SuperFlash EEPROM

SST28SF040, SST28LF040, SST28VF040

or 10

cycles. Data

• Fast Read Access Time

• Latched Address and Data

• Hardware and Software Data Protection

• End of Write Detection

• TTL I/O Compatibility

• Packages Available

The 28SF040/28LF040/28VF040 are best suited for

applications that require reprogrammable nonvolatile

mass storage of program, configuration, or data

memory. For all system applications, the 28SF040/

28LF040/28VF040 significantly improve performance

and reliability, while lowering power consumption when

compared with floppy diskettes or EPROM approaches.

EEPROM technology makes possible convenient and

economical updating of codes and control programs on-

line. The 28SF040/28LF040/28VF040 improve flexibil-

ity, while lowering the cost of program and configuration

storage application.

The functional block diagram shows the functional

blocks of the 28SF040/28LF040/28VF040. Figures 1

and 2 show the pin assignments for the 32 pin TSOP, 32

pin PDIP, and 32 pin PLCC packages. Pin description

and operation modes are described in Tables 1

through 4.

Device Operation

Commands are used to initiate the memory operation

functions of the device. Commands are written to the

device using standard microprocessor write sequences.

A command is written by asserting WE# low while

keeping CE# low. The address bus is latched on the

falling edge of WE# or CE#, whichever occurs last. The

data bus is latched on the rising edge of WE# or CE#,

whichever occurs first. Note, during the software data

protection sequence the address are latched on the

rising edge of OE# or CE#, whichever occurs first.

– 5.0V-only operation: 120 and 150 ns

– 3.0V-only operation: 200 and 250 ns

– 2.7V-only operation: 250 and 300 ns

– 7-Read-Cycle-Sequence Software Data

– Toggle Bit

– Data# Polling

– 32-Pin TSOP (8 mm x 20 mm)

– 32-Pin PLCC

– 32-Pin PDIP

Protection

Data Sheet

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