SST29EE010704CWHE Silicon Storage Technology, Inc, SST29EE010704CWHE Datasheet

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SST29EE010704CWHE

Manufacturer Part Number
SST29EE010704CWHE
Description
TSSOP
Manufacturer
Silicon Storage Technology, Inc

Specifications of SST29EE010704CWHE

Date_code
09+
FEATURES:
• Single Voltage Read and Write Operations
• Superior Reliability
• Low Power Consumption
• Fast Page-Write Operation
• Fast Read Access Time
PRODUCT DESCRIPTION
The SST29EE/LE/VE010 are 128K x8 CMOS Page-Write
EEPROMs manufactured with SST’s proprietary, high per-
formance CMOS SuperFlash technology. The split-gate
cell design and thick oxide tunneling injector attain better
reliability and manufacturability compared with alternate
approaches. The SST29EE/LE/VE010 write with a single
power supply. Internal Erase/Program is transparent to the
user. The SST29EE/LE/VE010 conform to JEDEC stan-
dard pinouts for byte-wide memories.
Featuring high performance Page-Write, the SST29EE/LE/
VE010 provide a typical Byte-Write time of 39 µsec. The
entire memory, i.e., 128 Kbyte, can be written page-by-
page in as little as 5 seconds, when using interface features
such as Toggle Bit or Data# Polling to indicate the comple-
tion of a Write cycle. To protect against inadvertent write,
the SST29EE/LE/VE010 have on-chip hardware and Soft-
ware Data Protection schemes. Designed, manufactured,
and tested for a wide spectrum of applications, the
SST29EE/LE/VE010 are offered with a guaranteed Page-
Write endurance of 10,000 cycles. Data retention is rated at
greater than 100 years.
©2002 Silicon Storage Technology, Inc.
S71061-07-000 2/02
1
– 4.5-5.5V for SST29EE010
– 3.0-3.6V for SST29LE010
– 2.7-3.6V for SST29VE010
– Endurance: 100,000 Cycles (typical)
– Greater than 100 years Data Retention
– Active Current: 20 mA (typical) for 5V and 10 mA
– Standby Current: 10 µA (typical)
– 128 Bytes per Page, 1024 Pages
– Page-Write Cycle: 5 ms (typical)
– Complete Memory Rewrite: 5 sec (typical)
– Effective Byte-Write Cycle Time: 39 µs (typical)
– 4.5-5.5V operation: 70 and 90 ns
– 3.0-3.6V operation: 150 and 200 ns
– 2.7-3.6V operation: 200 ns
(typical) for 3.0/2.7V
1 Mbit (128K x8) Page-Write EEPROM
304
SST29EE010 / SST29LE010 / SST29VE010
SST29EE / LE / VE0101Mb Page-Write flash memories
The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc.
• Latched Address and Data
• Automatic Write Timing
• End of Write Detection
• Hardware and Software Data Protection
• Product Identification can be accessed via
• TTL I/O Compatibility
• JEDEC Standard
• Packages Available
The SST29EE/LE/VE010 are suited for applications
that require convenient and economical updating of
program, configuration, or data memory. For all sys-
tem applications, the SST29EE/LE/VE010 significantly
improve performance and reliability, while lowering
power
improve flexibility while lowering the cost for program,
data, and configuration storage applications.
To meet high density, surface mount requirements, the
SST29EE/LE/VE010 are offered in 32-lead PLCC and 32-
lead TSOP packages. A 600-mil, 32-pin PDIP package is
also available. See Figures 1, 2, and 3 for pinouts.
Device Operation
The SST Page-Write EEPROM offers in-circuit electrical
write capability. The SST29EE/LE/VE010 does not require
separate Erase and Program operations. The internally
timed Write cycle executes both erase and program trans-
parently to the user. The SST29EE/LE/VE010 have indus-
try standard optional Software Data Protection, which SST
recommends always to be enabled. The SST29EE/LE/
VE010 are compatible with industry standard EEPROM
pinouts and functionality.
– Internal V
– Toggle Bit
– Data# Polling
Software Operation
– Flash EEPROM Pinouts and command sets
– 32-lead PLCC
– 32-lead TSOP (8mm x 14mm, 8mm x 20mm)
– 32-pin PDIP
Small-Sector Flash and SSF are trademarks of Silicon Storage Technology, Inc.
consumption.
PP
Generation
These specifications are subject to change without notice.
The
SST29EE/LE/VE010
Data Sheet

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