GLS27SF512-70-3C-NHE Greenliant, GLS27SF512-70-3C-NHE Datasheet
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GLS27SF512-70-3C-NHE
Manufacturer Part Number
GLS27SF512-70-3C-NHE
Description
Manufacturer
Greenliant
Datasheet
1.GLS27SF512-70-3C-NHE.pdf
(23 pages)
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Part Number
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Company:
Part Number:
GLS27SF512-70-3C-NHE
Manufacturer:
Greenlia
Quantity:
28
FEATURES:
• Organized as 64K x8 / 128K x8 / 256K x8
• 4.5-5.5V Read Operation
• Superior Reliability
• Low Power Consumption
• Fast Read Access Time
PRODUCT DESCRIPTION
The GLS27SF512/010/020 are a 64K x8 / 128K x8 / 256K
x8 CMOS, Many-Time Programmable (MTP) low cost
flash, manufactured with high performance SuperFlash
technology. The split-gate cell design and thick oxide tun-
neling injector attain better reliability and manufacturability
compared with alternate approaches. These MTP devices
can be electrically erased and programmed at least 1000
times using an external programmer with a 12V power sup-
ply. They have to be erased prior to programming. These
devices conform to JEDEC standard pinouts for byte-wide
memories.
Featuring
GLS27SF512/010/020 provide a Byte-Program time of 20
µs. Designed, manufactured, and tested for a wide spec-
trum of applications, these devices are offered with an
endurance of at least 1000 cycles. Data retention is rated at
greater than 100 years.
The GLS27SF512/010/020 are suited for applications that
require infrequent writes and low power nonvolatile stor-
age. These devices will improve flexibility, efficiency, and
performance while matching the low cost in nonvolatile
applications that currently use UV-EPROMs, OTPs, and
mask ROMs.
©2010 Greenliant Systems, Ltd.
512 Kbit / 1 Mbit / 2 Mbit (x8) Many-Time Programmable Flash
– Endurance: At least 1000 Cycles
– Greater than 100 years Data Retention
– Active Current: 20 mA (typical)
– Standby Current: 10 µA (typical)
– 70 ns
high-performance
GLS27SF512 / GLS27SF010 / GLS27SF020
GLS27SF512 / 010 / 0205.0V-Read 512Kb / 1Mb / 2Mb (x8) MTP flash memories
Byte-Program,
www.greenliant.com
the
• Fast Byte-Program Operation
• Electrical Erase Using Programmer
• TTL I/O Compatibility
• JEDEC Standard Byte-wide EPROM Pinouts
• Packages Available
• All non-Pb (lead-free) devices are RoHS compliant
To meet surface mount and conventional through hole
requirements, the GLS27SF512 are offered in 32-lead
PLCC, 32-lead TSOP, and 28-pin PDIP packages. The
GLS27SF010/020 are offered in 32-pin PDIP, 32-lead
PLCC, and 32-lead TSOP packages. See Figures 3, 4,
and 5 for pin assignments.
Device Operation
The GLS27SF512/010/020 are a low cost flash solution
that can be used to replace existing UV-EPROM, OTP,
and mask ROM sockets. These devices are functionally
(read and program) and pin compatible with industry
standard EPROM products. In addition to EPROM func-
tionality, these devices also support electrical Erase
operation via an external programmer. They do not
require a UV source to erase, and therefore the pack-
ages do not have a window.
Read
The Read operation of the GLS27SF512/010/020 is con-
trolled by CE# and OE#. Both CE# and OE# have to be
low for the system to obtain data from the outputs. Once
the address is stable, the address access time is equal to
the delay from CE# to output (T
output after a delay of T
assuming that CE# pin has been low and the addresses
– Byte-Program Time: 20 µs (typical)
– Chip Program Time:
– Does not require UV source
– Chip-Erase Time: 100 ms (typical)
– 32-lead PLCC
– 32-lead TSOP (8mm x 14mm)
– 32-pin PDIP for GLS27SF010/020
1.4 seconds (typical) for GLS27SF512
2.8 seconds (typical) for GLS27SF010
5.6 seconds (typical) for GLS27SF020
OE
from the falling edge of OE#,
CE
). Data is available at the
S71152-13-000
Data Sheet
05/10