MAAPGM0021-DIE MACOM [Tyco Electronics], MAAPGM0021-DIE Datasheet

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MAAPGM0021-DIE

Manufacturer Part Number
MAAPGM0021-DIE
Description
2W C/X-Band Power Amplifier 4.5-9.0 GHz
Manufacturer
MACOM [Tyco Electronics]
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MAAPGM0021-DIE
Manufacturer:
m/a-com
Quantity:
5 000
2W C/X-Band Power Amplifier
4.5–9.0 GHz
Features
Primary Applications
Description
The
on-chip bias networks. This product is fully matched to 50
ohms on both the input and output. It can be used as a power
amplifier stage or as a driver stage in high power applications.
Each device is 100% RF tested on wafer to ensure
performance compliance. The part is fabricated using M/A-
COM’s repeatable, high performance and highly reliable GaAs
Multifunction Self-Aligned Gate (MSAG
This process provides polyimide scratch protection.
3
5
rd
th
Electrical Characteristics: T
Single Carrier Level = 23 dBm
Single Carrier Level = 23 dBm
4.5 to 9.0 GHz Operation
2 Watt Saturated Output Power Level
Variable Drain Voltage (4-10V) Operation
Self-Aligned MSAG
Order Intermodulation Distortion
Order Intermodulation Distortion
1. T
Output Third Order Intercept
Multiple Band Point-to-Point Radio
SatCom
ISM Band
MAAPGM0021-Die
1-dB Compression Point
Power Added Efficiency
B
Small Signal Gain
= MMIC Base Temperature
Output Power
Drain Current
Gate Current
Noise Figure
Input VSWR
Parameter
Bandwidth
is a 2-stage 2 W power amplifier with
®
MESFET Process
B
= 40°C
®
) MESFET Process.
Symbol
VSWR
POUT
P1dB
OTOI
PAE
IGG
IDD
IM3
IM5
NF
G
1
, Z
f
0
= 50Ω, V
DD
4.5-9.0 GHz GaAs MMIC Amplifier
= 8V, V
Typical
4.5-9.0
< 750
1.7:1
< 2
33
30
31
17
41
31
41
9
GG
= -2V, P
Preliminary Information
in
= 18 dBm
RO-P-DS-3012 - A
Units
GHz
dBm
dBm
dBm
dBc
dBc
mA
mA
dB
dB
%

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MAAPGM0021-DIE Summary of contents

Page 1

... SatCom ♦ ISM Band Description The MAAPGM0021-Die is a 2-stage 2 W power amplifier with on-chip bias networks. This product is fully matched to 50 ohms on both the input and output. It can be used as a power amplifier stage driver stage in high power applications. Each device is 100% RF tested on wafer to ensure performance compliance. The part is fabricated using M/A- COM’ ...

Page 2

... DD Gate Voltage V GG Input Power Θ (approximately @ –2 V). DQ off GG Visit www.macom.com for additional data sheets and product information. MAAPGM0021-DIE Absolute Maximum 23.0 +12.0 -3.0 950 6.3 180 -55 to +150 Min Typ Max 4.0 8.0 10.0 -2.3 -2.0 -1.5 18.0 21.0 150 12.7° 150 Note 2 DQ ...

Page 3

... North America: Tel. (800) 366-2266 Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 Europe: Tel. +44 (1908) 574 200, Fax+44 (1908) 574 300 5.0 5.5 6.0 6.5 7.0 Frequency (GHz) and dBm Drain Voltage (V) Visit www.macom.com for additional data sheets and product information. MAAPGM0021-DIE POUT PAE 7.5 8.0 8.5 9.0 9 POUT PAE 7.5 GHz. o ...

Page 4

... North America: Tel. (800) 366-2266 Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 Europe: Tel. +44 (1908) 574 200, Fax+44 (1908) 574 300 5.0 5.5 6.0 6.5 7.0 Frequency (GHz) Figure 3. 1dB Compression Point vs. Drain Voltage 5.0 5.5 6.0 6.5 7.0 Frequency (GHz) Visit www.macom.com for additional data sheets and product information. MAAPGM0021-DIE VDD = 4 VDD = 6 VDD = 8 VDD = 10 7.5 8.0 8.5 9.0 9.5 GAIN VSWR 7.5 8.0 8.5 9.0 9 ...

Page 5

... Europe: Tel. +44 (1908) 574 200, Fax+44 (1908) 574 300 2.980 mm. 2.828 mm. 1.494 mm. 0.149mm. 0.152 mm Pad Visit www.macom.com for additional data sheets and product information. MAAPGM0021-DIE 117 x 117 x 3 mils) ( 2.828 mm. 1.490 mm. 0.152 mm. Size (µm) Size (mils) 100 x 200 200 x 150 ...

Page 6

... North America: Tel. (800) 366-2266 Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 Europe: Tel. +44 (1908) 574 200, Fax+44 (1908) 574 300 100 100 pF 0.1 µF before applying positive bias Visit www.macom.com for additional data sheets and product information. MAAPGM0021-DIE 100 pF RF OUT 100 0.1 µF to prevent DD ...

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