AT52BR1672-85CI ATMEL [ATMEL Corporation], AT52BR1672-85CI Datasheet - Page 14
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AT52BR1672-85CI
Manufacturer Part Number
AT52BR1672-85CI
Description
16-megabit Flash and 2-megabit/ 4-megabit SRAM Stack Memory
Manufacturer
ATMEL [ATMEL Corporation]
Datasheet
1.AT52BR1672-85CI.pdf
(39 pages)
DC Characteristics
Notes:
14
Symbol
I
I
I
I
I
I
I
I
I
I
I
I
V
V
V
V
V
V
LI
LO
SB1
SB2
SB3
CC
CC1
PP1
CC2
PP2
CC3
PP3
IL
IH
OL1
OL2
OH1
OH2
(1)(2)
1. In the erase mode, I
2. For 3.3V < V
AT52BR1672(T)/1674(T)
Parameter
Input Load Current
Output Leakage Current
V
V
V
V
V
V
V
V
V
V
Input Low Voltage
Input High Voltage
Output Low Voltage
Output Low Voltage
Output High Voltage
Output High Voltage
CC
CC
CC
CC
CC
PP
CC
PP
CC
PP
Active Read Current
Input Load Current
Programming Current (V
Programming Current (V
Standby Current CMOS
Standby Current TTL
Standby Current TTL
Programming Current (V
Programming Current (V
Programming Current (V
CC
< 3.6V, I
CC
is 50 mA.
CC
PP
PP
PP
PP
PP
(max) = 35 mA.
= 5.0V ± 0.5V)
= 12.0V ± 0.5V)
= V
= 5.0V ± 0.5V)
= 12.0V ± 0.5V)
CC
)
Condition
V
V
CE = V
CE = 2.0V to V
CE = 2.0V to V
f = 5 MHz; I
V
V
I
I
I
I
I
I
OL
OL
OH
OH
OH
OH
IN
I/O
PP
PP
= 2.1 mA
= 1.0 mA
= -400 µA
= -400 µA
= -100 µA
= -100 µA
= 0V to V
= 0V to V
= 0V, V
= V
CC
CC
- 0.3V to V
= 3.0V
CC
OUT
CC
CC
= 3.0V
CC
CC
= 0 mA, 3.3V ≤ V
, V
V
V
V
V
CC
CCQ
CCQ
CCQ
CCQ
CC
= 2.85V
< 2.6V
≥ 2.6V
< 2.6V
≥ 2.6V
CC
V
V
CCQ
CCQ
Min
2.0
2.4
2.5
- 0.2
- 0.1
2604B–STKD–09/02
Max
0.45
0.20
0.6
10
10
10
10
30
45
10
10
40
40
1
5
6
Units
mA
mA
mA
mA
mA
mA
mA
µA
µA
µA
µA
µA
µA
V
V
V
V
V
V
V
V