M36L0R7060B1ZAQE NUMONYX [Numonyx B.V], M36L0R7060B1ZAQE Datasheet - Page 20

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M36L0R7060B1ZAQE

Manufacturer Part Number
M36L0R7060B1ZAQE
Description
128 Mbit (Multiple Bank, Multilevel, Burst) Flash memory and 64 Mbit (Burst) PSRAM, 1.8 V supply, multichip package
Manufacturer
NUMONYX [Numonyx B.V]
Datasheet
Part numbering
7
20/22
Part numbering
Table 7.
Devices are shipped from the factory with the memory content bits erased to ’1’. For a list of
available options (Speed, Package, etc.) or for further information on any aspect of this
device, please contact the Numonyx Sales Office nearest to you.
Example:
Device Type
M36 = Multichip package (Multiple Flash + RAM)
Flash 1 Architecture
L = Multilevel, Multiple Bank, Burst mode
Flash 2 Architecture
0 = No Die
Operating Voltage
R = V
Flash 1 Density
7 = 128 Mbits
Flash 2 Density
0 = No Die
RAM 1 Density
6 = 64 Mbits
RAM 0 Density
0 = No Die
Parameter Blocks Location
T = Top Boot Block Flash
B = Bottom Boot Block Flash
Product Version
1 = 90 nm Flash technology Multilevel Design, 70 and 85 ns speed
0.11 µm PSRAM, 70 ns speed, burst mode
Package
ZAQ = Stacked TFBGA88 8 x 10 mm - 8 x 10 active ball array, 0.8 mm pitch
Option
E = ECOPACK® Standard packing
F = ECOPACK® Tape & Reel packing
DDF
= V
CCP
Ordering information scheme
= V
DDQF
= 1.7 to 1.95V
M36 L 0 R 7 0 6 0 T 1 ZAQ E
M36L0R7060T1, M36L0R7060B1

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