M36L0R8060B1ZAQE STMICROELECTRONICS [STMicroelectronics], M36L0R8060B1ZAQE Datasheet - Page 4

• Manufacturer Part Number: M36L0R8060B1ZAQE
• Description: 256 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory and 64 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package
• Manufacturer: STMICROELECTRONICS [STMicroelectronics]

M36L0R8060T1, M36L0R8060B1
SUMMARY DESCRIPTION
The M36L0R8060T1 and M36L0R8060B1 com-
bine two memory devices in a Multi-Chip Package:
This document should be read in conjunction with
the
datasheets.
Recommended operating conditions do not allow
more than one memory to be active at the same
time.
The memory is offered in a Stacked TFBGA88
(8x10mm, 8x10 ball array, 0.8mm pitch) package.
In addition to the standard version, the package is
also available in Lead-free version, in compliance
with JEDEC Std J-STD-020B, the ST ECOPACK
7191395 Specification, and the RoHS (Restriction
of Hazardous Substances) directive. All packages
are compliant with Lead-free soldering processes.
Flash Memory Component
For detailed information on how to use the Flash
memory component, refer to the M30L0R8000(T/
B)0 datasheet which is available from your local
STMicroelectronics distributor.
The memory is supplied with all the bits erased
(set to ‘1’).
PSRAM Component
For detailed information on how to use the PSRAM
component, see the M69KB096AA datasheet that
is available from your local STMicroelectronics
distributor.
4/18
a 256-Mbit, Multiple Bank Flash memory, the
M30L0R8000T0 or M30L0R8000B0,
a 64-Mbit PseudoSRAM, the M69KB096AA.
M30L0R8000x0
and
M69KB096AA
Figure 2. Logic Diagram
A0-A23
E
G
W
RP
WP
L
K
E
G
W
CR
UB
LB
F
P
F
P
F
P
P
F
P
P
F
24
M36L0R8060T1
M36L0R8060B1
V
DDQF
V
V SS
DDF
V
PPF
V
CCP
16
DQ0-DQ15
WAIT
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