MAAPGM0068-DIE MACOM [Tyco Electronics], MAAPGM0068-DIE Datasheet

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MAAPGM0068-DIE

Manufacturer Part Number
MAAPGM0068-DIE
Description
Amplifier, Power, 1.2W 5.7-8.5 GHz
Manufacturer
MACOM [Tyco Electronics]
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MAAPGM0068-DIE
Manufacturer:
m/a-com
Quantity:
5 000
Amplifier, Power, 1.2W
5.7-8.5 GHz
Features
Description
The
on-chip bias networks. This product is fully matched to 50 ohms
on both the input and output. It can be used as a power amplifier
stage or as a driver stage in high power applications.
Fabricated using M/A-COM’s repeatable, high performance and
highly reliable GaAs Multifunction Self-Aligned Gate (MSAG™)
Process, each device is 100% RF tested on wafer to ensure
performance compliance.
M/A-COM’s MSAG™ process features robust silicon-like manu-
facturing processes, planar processing of ion implanted transis-
tors, multiple implant capability enabling power, low-noise, switch
and digital FETs on a single chip, and polyimide scratch protec-
tion for ease of use with automated manufacturing processes.
The use of refractory metals and the absence of platinum in the
gate metal formulation prevents hydrogen poisoning when em-
ployed in hermetic packaging.
Electrical Characteristics: T
1.
2.
Also Available in:
1.5 Watt Saturated Output Power Level
Variable Drain Voltage (6-10V) Operation
MSAG
Description
Part Number
MAAPGM0068-DIE
T
Adjust V
Output Third Order Intermod,
Output Third Order Intercept
B
1-dB Compression Point
= MMIC Base Temperature
Power Added Efficiency
P
Small Signal Gain
out
®
Output VSWR
Output Power
Drain Current
Gate Current
Input VSWR
Parameter
= 24 dBm (DCL)
GG
Bandwidth
Process
between –2.6 and –1.2V to achieve specified Idq.
is a 3-stage 1.2W power amplifier with
MAAPGM0068
Ceramic
B
= 25°C
Symbol
VSWR
VSWR
P1dB
IMD3
P
PAE
1
TOI
I
I
, Z
OUT
G
GG
DD
f
0
MAAP-000068-SMB004
= 50 Ω, V
Sample Board (Die)
DD
= 8V, I
Typical
5.7-8.5
1.4:1
2.1:1
470
31
31
28
38
38
35
Primary Applications
5
SAMPLES
DQ
Point-to-Point Radio
SatCom
Broadband Wireless Access
= 320 mA
6, 7, and 8 GHz Bands
Mechanical Sample (Die)
MAAP-000068-MCH000
2
, P
in
MAAPGM0068-DIE
= 8 dBm, R
Units
GHz
dBm
dBm
dBm
dBc
mA
mA
dB
Preliminary Datasheet
%
G
= 300 Ω
Rev B

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MAAPGM0068-DIE Summary of contents

Page 1

... Symbol Typical 5.7-8 OUT 31 P1dB PAE VSWR 1.4:1 2.1:1 VSWR 38 TOI 35 IMD3 470 I DD MAAPGM0068-DIE Rev B Preliminary Datasheet 6, 7, and 8 GHz Bands Mechanical Sample (Die) MAAP-000068-MCH000 2 = 300 Ω = 320 dBm Units GHz dBm dBm dB % dBm dBc mA mA ...

Page 2

... Symbol Min Θ Power Derating Curve, Quiescent (No RF off last. GG MAAPGM0068-DIE Rev B Preliminary Datasheet Units 13 dBm +12.0 V -3.0 V 520 mA 5.2 W 170 °C °C Typ Max Unit 8.0 10.0 V -2.0 -1.2 V 8.0 11.0 dBm 28.0 °C/W Note 5 °C ...

Page 3

... Input VSWR Output VSWR 9.0 9.5 10.0 10 Figure 6. Output Power, Small Signal Gain, Power Added Efficiency, and Drain Current vs. Junction Temperature at 8V, 7.5 GHz, and 25% IDSS MAAPGM0068-DIE Rev B Preliminary Datasheet 6V 8V 10V 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10.0 Frequency (GHz) -20ºC 25ºC 75ºC 6.0 6.5 7.0 7.5 8.0 8.5 9 ...

Page 4

... GHz 7 GHz 21 8 GHz 9 GHz 19 6 GHz 7 GHz 17 8 GHz Figure 12. Gain vs. Output Power and Frequency at 8V and 25% IDSS MAAPGM0068-DIE Rev B Preliminary Datasheet Output Power (dBm) 6 GHz 7 GHz 8 GHz 9 GHz - ...

Page 5

... Figure 16. Third Order Intermod vs. Output Power and Frequency at 6V. 100 GHz 7 GHz 10 8 GHz Figure 18. Third Order Intermod vs. Output Power and Frequency at 8V. MAAPGM0068-DIE Rev B Preliminary Datasheet 6 GHz 7 GHz 8 GHz 9 GHz - Input Power (dBm) 6 GHz 7 GHz 8 GHz 5 7 ...

Page 6

... GHz 20 7 GHz 8 GHz -20 -15 -10 -5 Figure 22. Third Order Intermod vs. Temperature and Frequency MAAPGM0068-DIE Rev B Preliminary Datasheet 6 GHz 7 GHz 8 GHz Fundamental Output Power per Tone (dBm) 6 GHz 7 GHz 8 GHz ...

Page 7

... Chip edge to bond pad dimensions are shown to the center of the bond pad. Bond Pad Dimensions Pad RF In and Out DC Drain Supply Voltage VDD DC Gate Supply Voltage VGG 78 x 124 x 3 mils) ( Figure 23. Die Layout Size (μm) 100 x 200 200 x 150 150 x 150 MAAPGM0068-DIE Rev B Preliminary Datasheet Size (mils ...

Page 8

... For DC pad connections, use either ball or wedge bonds. For best RF performance, use wedge bonds of shortest length, although ball bonds are also acceptable. Biasing Note: Must apply negative bias to V damage to amplifier GND 100- 200 100- 200 pF before applying positive bias MAAPGM0068-DIE Rev B Preliminary Datasheet 0.01-0.1μF RF OUT to prevent DD ...

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