K4H510438D SAMSUNG [Samsung semiconductor], K4H510438D Datasheet - Page 15

• Manufacturer Part Number: K4H510438D
• Description: 512Mb D-die DDR SDRAM Specification
• Manufacturer: SAMSUNG [Samsung semiconductor]

K4H510438D
K4H510838D
K4H511638D
18.0 Overshoot/Undershoot specification for Data, Strobe and Mask Pins
Maximum peak amplitude allowed for overshoot
Maximum peak amplitude allowed for undershoot
The area between the overshoot signal and VDD must be less than or equal to
The area between the undershoot signal and GND must be less than or equal to
DQ/DM/DQS AC overshoot/Undershoot Definition
-1
-2
-3
-4
-5
5
4
3
2
1
0
Parameter
Maximum Amplitude = 1.2V
0 0.5 1.0 1.42 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 5.68 6.0 6.5 7.0
VDDQ
Overshoot
Area
Tims(ns)
Maximum Amplitude = 1.2V
undershoot
GND
DDR400
2.4 V-ns
2.4 V-ns
1.2 V
1.2 V
Rev. 1.2 January 2006
Specification
DDR333
2.4 V-ns
2.4 V-ns
1.2 V
1.2 V
DDR SDRAM
DDR266
2.4 V-ns
2.4 V-ns
1.2 V
1.2 V