K4S510432B-CL75 SAMSUNG [Samsung semiconductor], K4S510432B-CL75 Datasheet - Page 9

• Manufacturer Part Number: K4S510432B-CL75
• Description: 512Mb B-die SDRAM Specification
• Manufacturer: SAMSUNG [Samsung semiconductor]

(Recommended operating condition unless otherwise noted, T
DC CHARACTERISTICS (x8)
SDRAM 512Mb B-die (x4, x8, x16)
Notes :
Operating current
(One bank active)
Precharge standby current in
power-down mode
Precharge standby current in
non power-down mode
Active standby current in
power-down mode
Active standby current in
non power-down mode
(One bank active)
Operating current
(Burst mode)
Refresh current
Self refresh current
1. Measured with outputs open.
2. Refresh period is 64ms.
3. K4S510832B-UC75
4. K4S510832B-UL75
5. Unless otherwise noted, input swing IeveI is CMOS(V
Parameter
Symbol
I
I
I
I
CC2
CC2
CC3
CC3
I
I
I
I
CC2
CC2
CC3
CC3
I
I
I
I
CC1
CC4
CC5
CC6
PS CKE & CLK ≤ V
NS
PS CKE & CLK ≤ V
NS
P
N
P
N
CKE ≤ V
CKE ≥ V
Input signals are changed one time during 20ns
CKE ≥ V
Input signals are stable
CKE ≤ V
CKE ≥ V
Input signals are changed one time during 20ns
CKE ≥ V
Input signals are stable
t
CKE ≤ 0.2V
Burst length = 1
t
I
I
Page burst
RC
RC
O
O
= 0 mA
= 0 mA
≥ t
≥ t
RC
RC
IL
IH
IH
IL
IH
IH
(min)
(min)
(max), t
(max), t
(min), CS ≥ V
(min), CLK ≤ V
(min), CS ≥ V
(min), CLK ≤ V
IL
IL
Test Condition
(max), t
(max), t
CC
CC
A
= 10ns
= 10ns
= 0 to 70°C)
IH
IH
IH
CC
CC
IL
IL
(min), t
(min), t
/V
(max), t
(max), t
= ∞
= ∞
IL
=V
CC
CC
DDQ
CC
CC
= 10ns
= 10ns
/V
= ∞
= ∞
SSQ)
C
L
Revision. 1.1 August 2004
Version
100
200
75
90
20
10
30
25
2
2
6
6
6
3
CMOS SDRAM
Unit
mA
mA
mA
mA
mA
mA
mA
mA
mA
uA
Note
1
1
2
3
4