K4S640832C-TC/L10 SAMSUNG [Samsung semiconductor], K4S640832C-TC/L10 Datasheet
K4S640832C-TC/L10
Related parts for K4S640832C-TC/L10
K4S640832C-TC/L10 Summary of contents
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... K4S640832C * Samsung Electronics reserves the right to change products or specification without notice. 64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.1 Oct. 1999 CMOS SDRAM Rev.0.1 Oct.1999 ...
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... K4S640832C Revision History Revision 0.1 (Oct. 02, 1999) • Changed misprinted speed bining from -75 to -70. CMOS SDRAM Rev.0.1 Oct.1999 ...
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... ORDERING INFORMATION K4S640832C-TC/L70 K4S640832C-TC/L80 K4S640832C-TC/L1H K4S640832C-TC/L1L K4S640832C-TC/L10 Data Input Register Column Decoder Latency & Burst Length ...
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... K4S640832C PIN CONFIGURATION (Top view) PIN FUNCTION DESCRIPTION Pin Name CLK System clock CS Chip select CKE Clock enable Address Bank select address 0 1 RAS Row address strobe CAS Column address strobe WE Write enable DQM Data input/output mask DQ ~ Data input/output ...
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... K4S640832C ABSOLUTE MAXIMUM RATINGS Parameter Voltage on any pin relative to Vss Voltage on V supply relative to Vss DD Storage temperature Power dissipation Short circuit current Note : Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded. Functional operation should be restricted to recommended operating condition. Exposure to higher than recommended voltage for extended periods of time could affect device reliability. ...
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... I CC3 Operating current I CC4 (Burst mode) Refresh current I CC5 Self refresh current I CC6 Notes : 1. Measured with outputs open. 2. Refresh period is 64ms. 3. K4S640832C-TC** 4. K4S640832C-TL Test Condition Burst length = (min CKE V (max 15ns ...
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... K4S640832C AC OPERATING TEST CONDITIONS Parameter Input levels (Vih/Vil) Input timing measurement reference level Input rise and fall time Output timing measurement reference level Output load condition Output 870 (Fig output load circuit OPERATING AC PARAMETER (AC operating conditions unless otherwise noted) Parameter ...
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... K4S640832C AC CHARACTERISTICS (AC operating conditions unless otherwise noted) Parameter Symbol CAS latency=3 CLK cycle time CAS latency=2 CAS latency=3 CLK to valid output delay CAS latency=2 CAS latency=3 Output data hold time CAS latency=2 CLK high pulse width CLK low pulse width Input setup time ...
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... K4S640832C IBIS SPECIFICATION I Characteristics (Pull-up) OH 100MHz 100MHz Voltage Min Max (V) I (mA) I (mA) 3.45 -2.4 3.3 -27.3 3.0 0.0 -74.1 2.6 -21.1 -129.2 2.4 -34.1 -153.3 2.0 -58.7 -197.0 1.8 -67.3 -226.2 1.65 -73.0 -248.0 1.5 -77.9 -269.7 1.4 -80.8 -284.3 1.0 -88.6 -344.5 0.0 -93.0 -502.4 I Characteristics (Pull-down) OL 100MHz 100MHz Voltage Min Max (V) I (mA) I (mA) 0 0.0 0.0 0.4 27.5 70.2 0.65 41.8 107.5 0.85 51.6 133.8 1 58.0 151.2 1.4 70.7 187.7 1.5 72.9 194.4 1.65 75.4 202.5 1.8 77.0 208.6 1.95 77.6 212.0 3 80.3 219.6 3.45 81.4 222 ...
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... K4S640832C V Clamp @ CLK, CKE, CS, DQM & (V) I (mA) DD 0.0 0.0 0.2 0.0 0.4 0.0 0.6 0.0 0.7 0.0 0.8 0.0 0.9 0.0 1.0 0.23 1.2 1.34 1.4 3.02 1.6 5.06 1.8 7.35 2.0 9.83 2.2 12.48 2.4 15.30 2.6 18.31 V Clamp @ CLK, CKE, CS, DQM & (V) I (mA) SS -2.6 -57.23 -2.4 -45.77 -2.2 -38.26 -2.0 -31.22 -1.8 -24.58 -1.6 -18.37 -1.4 -12.56 -1.2 -7.57 -1.0 -3.37 -0.9 -1.75 -0.8 -0.58 -0.7 -0.05 -0.6 0.0 -0.4 0.0 -0.2 0.0 0.0 0.0 Minimum V clamp current DD (Referenced Voltage I (mA) Minimum V clamp current -10 -20 -30 -40 -50 -60 Voltage I (mA) CMOS SDRAM ...
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... K4S640832C SIMPLIFIED TRUTH TABLE Command Register Mode register set Auto refresh Entry Refresh Self refresh Bank active & row addr. Read & Auto precharge disable column address Auto precharge enable Write & Auto precharge disable Column Address Auto precharge enable Burst stop ...