K4S511632C SAMSUNG [Samsung semiconductor], K4S511632C Datasheet - Page 9

• Manufacturer Part Number: K4S511632C
• Description: DDP 512Mbit SDRAM
• Manufacturer: SAMSUNG [Samsung semiconductor]

K4S511632C
I
I
IBIS SPECIFICATION
OH
OL
Voltage
Voltage
Characteristics (Pull-down)
Characteristics (Pull-up)
0.65
0.85
1.65
1.95
3.45
3.45
1.65
(V)
3.3
3.0
2.6
2.4
2.0
1.8
1.5
1.4
1.0
0.0
(V)
0.4
1.4
1.5
1.8
0
1
3
100MHz/
100MHz/
133MHz
133MHz
I (mA)
I (mA)
-21.1
-34.1
-58.7
-67.3
-73.0
-77.9
-80.8
-88.6
-93.0
27.5
41.8
51.6
58.0
70.7
72.9
75.4
77.0
77.6
80.3
81.4
Min
Min
0.0
0.0
100MHz/
100MHz/
133MHz
133MHz
-129.2
-153.3
-197.0
-226.2
-248.0
-269.7
-284.3
-344.5
-502.4
I (mA)
I (mA)
107.5
133.8
151.2
187.7
194.4
202.5
208.6
212.0
219.6
222.6
Max
Max
70.2
-27.3
-74.1
0.0
-2.4
66MHz
66MHz
I (mA)
I (mA)
-13.3
-27.5
-35.5
-41.1
-47.9
-52.4
-72.5
-93.0
17.7
26.9
33.3
37.6
46.6
48.0
49.5
50.7
51.5
54.2
54.9
Min
Min
0.0
-0.7
-7.5
-100
-200
-300
-400
-500
-600
250
200
150
100
50
0
0
0
0
66MHz, 100MHz and 133MHz Pull-down
66MHz, 100MHz and 133MHz Pull-up
0.5
0.5
1
1
I
I
I
OH
OH
OH
I
I
I
OL
OL
OL
Min (100MHz/133MHz)
Min (66MHz)
Max (66 and 100MHz/133MHz)
Min (100MHz/133MHz)
Min (66MHz)
1.5
1.5
Max (100MHz/133MHz)
Voltage
Voltage
2
2
Rev. 0.1 Sept. 2001
CMOS SDRAM
2.5
2.5
3
3
3.5
3.5