K4S511632D-KC SAMSUNG [Samsung semiconductor], K4S511632D-KC Datasheet - Page 6

• Manufacturer Part Number: K4S511632D-KC
• Description: DDP 512Mbit SDRAM 8M x 16bit x 4 Banks Synchronous DRAM LVTTL
• Manufacturer: SAMSUNG [Samsung semiconductor]

DC CHARACTERISTICS
K4S511632D
(Recommended operating condition unless otherwise noted, T
Notes :
Operating current
(One bank active)
Precharge standby current in
power-down mode
Precharge standby current in
non power-down mode
Active Standby current
in power-down mode
Active standby current in
non power-down mode
(One bank active)
Operating current
(Burst mode)
Refresh current
Self refresh current
1. Measured with outputs open.
2. Refresh period is 64ms.
3. K4S511632D-KC**
4. K4S511632D-KL**
5. Unless otherwise noticed, input swing level is CMOS(V
Parameter
Symbol
I
I
I
I
CC2
I
CC2
CC3
I
CC3
I
I
CC2
CC3
I
CC2
CC3
I
I
I
CC1
CC4
CC5
CC6
NS
NS
PS
PS
P
N
P
N
Burst length = 1
t
I
CKE
CKE & CLK
CKE
Input signals are changed one time during 20ns
CKE
Input signals are stable
CKE
CKE & CLK
CKE
Input signals are changed one time during 20ns
CKE
Input signals are stable
I
Page burst
4banks activated.
t
t
CKE
R C
O
O
CCD
R C
= 0 mA
= 0 mA
= 2CLKs
t
t
RC
RC
V
V
V
V
V
V
0.2V
(min)
I H
I H
I H
I H
(min)
IL
IL
(max), t
(min), CS
(min), CLK
(max), t
(min), CS
(min), CLK
V
V
Test Condition
IL
IL
A
(max), t
(max), t
CC
CC
= 0 to 70 C)
= 10ns
= 10ns
IH
V
V
/V
I H
V
I H
V
CC
CC
IL
IL
IL
(min), t
(min), t
(max), t
(max), t
=V
=
=
DDQ
CC
CC
/V
CC
CC
= 10ns
= 10ns
SSQ
=
=
).
C
L
-7C
200
220
440
180
220
400
-75
Version
40
20
12
12
60
50
Rev. 0.0 July. 2002
4
4
6
3
CMOS SDRAM
-1H
180
240
380
180
240
380
-1L
Unit
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
Note
1
1
2
3
4