K4S51163PF-F1L SAMSUNG [Samsung semiconductor], K4S51163PF-F1L Datasheet - Page 3
![no-image](/images/no-image-200.jpg)
K4S51163PF-F1L
Manufacturer Part Number
K4S51163PF-F1L
Description
8M x 16Bit x 4 Banks Mobile-SDRAM
Manufacturer
SAMSUNG [Samsung semiconductor]
Datasheet
1.K4S51163PF-F1L.pdf
(12 pages)
K4S51163PF-Y(P)F
Substrate(2Layer)
A
B
C
D
G
H
E
F
J
9
8
< Bottom View
*1: Bottom View
< Top View
7
*2: Top View
6
E
#A1 Ball Origin Indicator
5
E
1
4
*2
Package Dimension and Pin Configuration
3
*1
>
E/2
>
2
b
1
z
A1
A
3
C
D
G
H
A
B
E
F
J
Symbol
V
Pin Name
BA
L(U)DQM
DQ
A
V
DDQ
A
E
D
0
A
E
D
DD
e
b
z
CLK
CKE
0
RAS
CAS
WE
1
1
CS
1
UDQM
~ A
0
~ BA
DQ14
DQ12
DQ10
/V
/V
VSS
DQ8
VSS
A12
~
A8
1
SS
SSQ
12
15
1
DQ15
DQ13
DQ11
DQ9
CLK
A11
NC
A7
A5
2
1.00
0.27
0.45
Min
< Top View
54Ball(6x9) FBGA
-
-
-
-
-
-
Data Output Power/Ground
VDDQ
VDDQ
VSSQ
VSSQ
Mobile-SDRAM
VSS
CKE
Column Address Strobe
Data Input/Output Mask
A9
A6
A4
Power Supply/Ground
3
Bank Select Address
Row Address Strobe
Data Input/Output
Pin Function
System Clock
Clock Enable
Write Enable
Chip Select
VDDQ
VDDQ
VSSQ
VSSQ
Address
1.10
0.32
11.5
6.40
10.0
6.40
0.80
0.50
Typ
VDD
CAS
BA0
*2
A0
A3
-
7
September 2004
>
LDQM
DQ0
DQ2
DQ4
DQ6
RAS
BA1
A1
A2
8
[Unit:mm]
Max
1.20
0.37
0.55
0.10
-
-
-
-
-
VDD
VDD
DQ1
DQ3
DQ5
DQ7
A10
WE
CS
9