SSD40N04-20D SECOS [SeCoS Halbleitertechnologie GmbH], SSD40N04-20D Datasheet
SSD40N04-20D
Manufacturer Part Number
SSD40N04-20D
Description
N-Ch Enhancement Mode Power MOSFET
Manufacturer
SECOS [SeCoS Halbleitertechnologie GmbH]
Datasheet
1.SSD40N04-20D.pdf
(4 pages)
http://www.SeCoSGmbH.com/
24-Sep-2010 Rev.C
DESCRIPTION
FEATURES
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS
These miniature surface mount MOSFETs utilize a high cell density process.
Low R
device ideal for use in power management circuitry. Typical applications are
PWMDC-DC converters, power management in portable and battery-powered
products such as computers, printers, battery charger, telecommunication
power system, and telephones power system.
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Total Power Dissipation
Operating Junction and Storage Temperature Range
Maximum Thermal Resistance Junction-Ambient
Maximum Thermal Resistance Junction-Case
a.
b.
Notes：
V
Low R
Miniature TO-252 surface mount package saves board space.
High power and current handling capability.
Low side high current DC-DC Converter applications.
DS
40
Surface Mounted on 1” x 1” FR4 Board.
Pulse width limited by maximum junction temperature.
DS(on)
(V)
DS(on)
Elektronische Bauelemente
assures minimal power loss and conserves energy, making this
PRODUCT SUMMARY
provides higher efficiency and extends battery life.
27@V
22@V
R
PARAMETER
DS
(on) m(
b
GS
GS
= 4.5V
= 10V
a
a
THERMAL RESISTANCE RATINGS
(T
A suffix of “-C” specifies halogen free
I
D
A
39
36
(A)
= 25°C unless otherwise specified)
RoHS Compliant Product
a
a
P
I
D
SYMBOL
D
@T
@T
T
J
R
R
V
V
, T
I
DM
I
θJC
A
θJA
GS
DS
S
A
=25℃
=25℃
STG
N-Ch Enhancement Mode Power MOSFET
39A, 40V, R
SSD40N04-20D
RATINGS
-55 ~ 175
±20
3.0
50
40
39
40
30
50
Any changes of specification will not be informed individually.
DS(ON)
REF.
G
A
B
C
D
E
F
H
M
TO-252(D-Pack)
Min.
5.20
2.20
0.45
2.40
5.40
6.4
6.8
0.8
Gate
Millimeter
22mΩ
A
B
K
J
Max.
5.50
2.40
0.58
1.20
6.8
7.3
3.0
6.2
°C / W
°C / W
UNIT
G E
H
F
REF.
°C
Source
W
M
O
V
V
A
A
A
K
N
P
J
Drain
Page 1 of 4
Min.
0.70
0.50
0.43
0.9
Millimeter
2.30 REF.
0
N
O
C
D
P
Max.
0.90
0.15
0.58
1.1
1.6
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SSD40N04-20D Summary of contents
Page 1
... SYMBOL =25℃ =25℃ STG THERMAL RESISTANCE RATINGS a R θJA R θJC SSD40N04-20D 39A, 40V, R 22mΩ DS(ON) TO-252(D-Pack Millimeter Millimeter REF. REF. Min. Max. Min. A 6.4 6.8 J 2.30 REF. B 5.20 5. ...
Page 2
... 1317 iss C - 272 oss d(on d(off SSD40N04-20D 39A, 40V, R 22mΩ DS(ON) TEST CONDITIONS - 250 μA DS GS, D ±100 0V 20V 24V μ 24V 0V ...
Page 3
... Elektronische Bauelemente CHARACTERISTIC CURVE http://www.SeCoSGmbH.com/ 24-Sep-2010 Rev.C SSD40N04-20D N-Ch Enhancement Mode Power MOSFET 39A, 40V, R 22mΩ DS(ON) Any changes of specification will not be informed individually. Page ...
Page 4
... Elektronische Bauelemente CHARACTERISTIC CURVE http://www.SeCoSGmbH.com/ 24-Sep-2010 Rev.C SSD40N04-20D N-Ch Enhancement Mode Power MOSFET 39A, 40V, R 22mΩ DS(ON) Any changes of specification will not be informed individually. Page ...