SSD60N04-12D SECOS [SeCoS Halbleitertechnologie GmbH], SSD60N04-12D Datasheet
SSD60N04-12D
Manufacturer Part Number
SSD60N04-12D
Description
N-Ch Enhancement Mode Power MOSFET
Manufacturer
SECOS [SeCoS Halbleitertechnologie GmbH]
Datasheet
1.SSD60N04-12D.pdf
(2 pages)
http://www.SeCoSGmbH.com/
10-Jun-2010 Rev.A
DESCRIPTION
FEATURES
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS
These miniature surface mount MOSFETs utilize a high cell density trench
process to provide low R
Typical applications are DC-DC converters and power management in portable
And battery-powered products such as computers, printers, PCMCIA cards,
cellular and cordless telephones.
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Total Power Dissipation
Operating Junction and Storage Temperature Range
Maximum Thermal Resistance Junction-Ambient
Maximum Thermal Resistance Junction-Case
a.
b.
Notes：
V
Low R
Low thermal impedance copper leadframe DPAK saves board space.
Fast switching speed.
High performance trench technology.
DS
40
Surface Mounted on 1” x 1” FR4 Board.
Pulse width limited by maximum junction temperature.
(V)
DS(on)
Elektronische Bauelemente
PRODUCT SUMMARY
provides higher efficiency and extends battery life.
14@V
12@V
R
PARAMETER
DS
(on) m(
b
GS
GS
DS(on)
= 4.5V
= 10V
a
a
and to ensure minimal power loss and heat dissipation.
THERMAL RESISTANCE RATINGS
(T
A suffix of “-C” specifies halogen free
I
D
A
53
49
(A)
= 25°C unless otherwise specified)
RoHS Compliant Product
a
a
P
I
D
SYMBOL
D
@T
@T
T
Gate
J
R
R
V
V
, T
I
DM
I
θJC
A
θJA
GS
DS
S
A
=25℃
=25℃
STG
N-Ch Enhancement Mode Power MOSFET
Source
Drain
53A, 40V, R
SSD60N04-12D
RATINGS
-55 ~ 175
±20
3.0
50
40
53
40
30
50
Any changes of specification will not be informed individually.
DS(ON)
REF.
G
A
B
C
D
E
F
H
M
TO-252(D-Pack)
Min.
5.20
2.20
0.45
2.40
5.40
6.4
6.8
0.8
Millimeter
12mΩ
A
B
K
J
Max.
5.50
2.40
0.58
1.20
6.8
7.3
3.0
6.2
°C / W
°C / W
UNIT
G E
H
F
REF.
°C
W
M
O
V
V
A
A
A
K
N
P
J
Page 1 of 2
Min.
0.70
0.50
0.43
0.9
Millimeter
2.30 REF.
0
N
O
C
D
P
Max.
0.90
0.15
0.58
1.1
1.6
Related parts for SSD60N04-12D
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
Manufacturer:
SeCoS Halbleitertechnologie GmbH
Datasheet:
Part Number:
Description:
Manufacturer:
SeCoS Halbleitertechnologie GmbH
Datasheet:
Part Number:
Description:
Manufacturer:
SeCoS Halbleitertechnologie GmbH
Datasheet:
Part Number:
Description:
Manufacturer:
SeCoS Halbleitertechnologie GmbH
Datasheet:
Part Number:
Description:
Manufacturer:
SeCoS Halbleitertechnologie GmbH
Datasheet:
Part Number:
Description:
Manufacturer:
SeCoS Halbleitertechnologie GmbH
Datasheet:
Part Number:
Description:
2.0 AMP Surface Mount Schottky Barrier Rectifiers
Manufacturer:
SECOS [SeCoS Halbleitertechnologie GmbH]
Datasheet:
Part Number:
Description:
VOLTAGE 50 ~ 1000 V, 4.0AMP Glass Passivated Bridge Rectifiers
Manufacturer:
SECOS [SeCoS Halbleitertechnologie GmbH]
Datasheet:
Part Number:
Description:
3.5A, 20V, RDS(ON) 75m -2.5A, -20V, RDS(ON) 160m N And P-Channel Enhancement Mode Power MOSFET
Manufacturer:
SECOS [SeCoS Halbleitertechnologie GmbH]
Datasheet:
Part Number:
Description:
P-Channel Enhancement Mode Mos.FET
Manufacturer:
SECOS [SeCoS Halbleitertechnologie GmbH]
Datasheet:
Part Number:
Description:
-2.3A , -30V , RDS(ON) 120 m P-Channel Enhancement Mode MOSFET
Manufacturer:
SECOS [SeCoS Halbleitertechnologie GmbH]
Datasheet:
SSD60N04-12D Summary of contents
Page 1
... SYMBOL =25℃ =25℃ STG THERMAL RESISTANCE RATINGS a R θJA R θJC SSD60N04-12D 53A, 40V, R 12mΩ DS(ON) TO-252(D-Pack Drain Millimeter REF. REF. Min. Max. A 6.4 6 5.20 5. 2.20 2 ...
Page 2
... Dynamic d(on d(off SSD60N04-12D 53A, 40V, R 12mΩ DS(ON) TEST CONDITIONS - 250 μA DS GS, D ±100 0V 20V 32V μ 32V 0V 5V 10V ...