K9F1208B0C-P SAMSUNG [Samsung semiconductor], K9F1208B0C-P Datasheet - Page 37
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K9F1208B0C-P
Manufacturer Part Number
K9F1208B0C-P
Description
FLASH MEMORY
Manufacturer
SAMSUNG [Samsung semiconductor]
Datasheet
1.K9F1208B0C-P.pdf
(38 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
K9F1208B0C-P
Manufacturer:
SAMSUNG
Quantity:
9 600
Data Protection & Power-up sequence
K9F1208U0C
K9F1208R0C
The device is designed to offer protection from any involuntary program/erase during power-transitions. An internal voltage detector
disables all functions whenever Vcc is below about 1.1V(1.8V device), 1.8V(2.7V device), 2V(3.3V device). WP pin provides hard-
ware protection and is recommended to be kept at V
required before internal circuit gets ready for any command sequences as shown in Figure 18. The two step command sequence for
program/erase provides additional software protection.
WP
WE
V
Figure 18. AC Waveforms for Power Transition
CC
2.7V device : ~ 2.0V
1.8V device : ~ 1.5V
3.3V device : ~ 2.5V
K9F1208B0C
100µs
High
IL
during power-up and power-down. A recovery time of minimum 100µs is
37
FLASH MEMORY
2.7V device : ~ 2.0V
1.8V device : ~ 1.5V
3.3V device : ~ 2.5V