M464S0824DT1-C1H SAMSUNG [Samsung semiconductor], M464S0824DT1-C1H Datasheet - Page 7

• Manufacturer Part Number: M464S0824DT1-C1H
• Description: 8Mx64 SDRAM SODIMM based on 4Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD
• Manufacturer: SAMSUNG [Samsung semiconductor]

M464S0824DT1
AC CHARACTERISTICS
REFER TO THE INDIVIDUAL COMPONENT, NOT THE WHOLE MODULE.
Notes :
CLK cycle time
CLK to valid output delay
Output data hold time
CLK high pulse width
CLK low pulse width
Input setup time
Input hold time
CLK to output in Low-Z
CLK to output in Hi-Z
1. Parameters depend on programmed CAS latency.
2. If clock rising time is longer than 1ns, (tr/2-0.5)ns should be added to the parameter.
3. Assumed input rise and fall time (tr & tf) = 1ns.
If tr & tf is longer than 1ns, transient time compensation should be considered,
i.e., [(tr + tf)/2-1]ns should be added to the parameter.
Parameter
CAS latency=3
CAS latency=2
CAS latency=3
CAS latency=2
CAS latency=3
CAS latency=2
CAS latency=3
CAS latency=2
(AC operating conditions unless otherwise noted)
Symbol
t
t
t
t
t
SAC
t
t
t
t
SHZ
SLZ
OH
CC
CH
SH
CL
SS
Min
10
10
3
3
3
3
2
1
1
-1H
1000
Max
6
6
6
6
Min
10
12
3
3
3
3
2
1
1
-1L
Rev. 0.0 Jun. 1999
1000
Max
PC100 SODIMM
6
7
6
7
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
Note
1,2
1
2
3
3
3
3
2