M464S1654BT1 SAMSUNG [Samsung semiconductor], M464S1654BT1 Datasheet - Page 4
![no-image](/images/no-image-200.jpg)
M464S1654BT1
Manufacturer Part Number
M464S1654BT1
Description
16Mx64 SDRAM SODIMM based on 16Mx16, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD
Manufacturer
SAMSUNG [Samsung semiconductor]
Datasheet
1.M464S1654BT1.pdf
(5 pages)
1.0
0.8
0.6
0.4
0.2
0
0
7-UNIT 500mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
V
S
1
= 20V
Ta = 75°C
Ta = 25°C
Ta = –20°C
Input Characteristics
Input voltage V
2
3
I
(V)
4
5
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
5
4
3
2
1
0
0
V
S
2
= 20V
Ta = 75°C
Ta = 25°C
Ta = –20°C
Input Characteristics
Input voltage V
4
6
I
(V)
8
M63800FP
10
Aug. 1999