M464S1724CT1-C1H SAMSUNG [Samsung semiconductor], M464S1724CT1-C1H Datasheet - Page 5

• Manufacturer Part Number: M464S1724CT1-C1H
• Description: 16Mx64 SDRAM SODIMM based on 8Mx16,4Banks,4K Refresh,3.3V Synchronous DRAMs with SPD
• Manufacturer: SAMSUNG [Samsung semiconductor]

DC CHARACTERISTICS
(Recommended operating condition unless otherwise noted, T
M464S1724CT1
Operating current
(One bank active)
Precharge standby current in
power-down mode
Precharge standby current in
non power-down mode
Active standby current in
power-down mode
Active standby current in
non power-down mode
(One bank active)
Operating current
(Burst mode)
Refresh current
Self refresh current
Notes :
1. Measured with outputs open.
2. Refresh period is 64ms.
3. Unless otherwise noted, input swing level is CMOS(V
Parameter
Symbol
I
I
I
I
CC2
CC2
CC3
CC3
I
I
I
I
CC2
CC2
CC3
CC3
I
I
I
I
CC1
CC4
CC5
CC6
NS
NS
PS
PS
N
P
P
N
Burst length = 1
t
I
CKE
CKE & CLK
CKE
Input signals are changed one time during 20ns
CKE
Input signals are stable
CKE
CKE & CLK
CKE
Input signals are changed one time during 20ns
CKE
Input signals are stable
I
Page burst
4Banks activated
t
t
CKE
RC
O
O
CCD
RC
= 0 mA
= 0 mA
= 2CLKs
t
t
RC
RC
0.2V
V
V
V
V
V
V
(min)
IL
IH
IH
IL
IH
IH
(min)
(max), t
(max), t
(min), CS
(min), CLK
(min), CS
(min), CLK
V
V
A
IL
IL
Test Condition
(max), t
(max), t
= 0 to 70 C)
CC
CC
IH
= 10ns
= 10ns
/V
V
V
V
V
IH
IH
IL
CC
CC
IL
IL
(min), t
(min), t
=V
(max), t
(max), t
=
=
DDQ
CC
CC
/V
CC
CC
SSQ
= 10ns
= 10ns
=
=
)
C
L
-1H
Rev. 0.0 April. 2000
Version
PC100 SODIMM
680
160
240
160
700
960
6.4
56
40
40
12
8
8
-1L
Unit
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
Note
1
1
2