M368L1624DTM-CCC SAMSUNG [Samsung semiconductor], M368L1624DTM-CCC Datasheet - Page 3

• Manufacturer Part Number: M368L1624DTM-CCC
• Description: 184pin Unbuffered Module based on 256Mb D-die 64/72-bit Non ECC/ECC
• Manufacturer: SAMSUNG [Samsung semiconductor]

128MB, 256MB, 512MB Unbuffered DIMM
184Pin Unbuffered DIMM based on 256Mb D-die (x8, x16)
Ordering Information
Operating Frequencies
Feature
• Power supply : Vdd: 2.6V ± 0.1V, Vddq: 2.6V ± 0.1V
•
• Bidirectional data strobe(DQS)
• Differential clock inputs(CK and CK)
• DLL aligns DQ and DQS transition with CK transition
• Programmable Read latency 3 (clock) for DDR400 , 2.5 (clock) for DDR333
• Programmable Burst length (2, 4, 8)
• Programmable Burst type (sequential & interleave)
• Edge aligned data output, center aligned data input
• Auto & Self refresh, 7.8us refresh interval(8K/64ms refresh)
• Serial presence detect with EEPROM
• PCB : Height 1,250 (mil), single (128MB, 256MB) and double(512MB) sided
• SSTL_2 Interface
Double-data-rate architecture; two data transfers per clock cycle
M368L1624DTM-C(L)CC/C4
M368L3223DTM-C(L)CC/C4
M368L6423DTM-C(L)CC/C4
M381L3223DTM-C(L)CC/C4
M381L6423DTM-C(L)CC/C4
SAMSUNG ELECTRONICS CO., Ltd. reserves the right to change products and specifications without notice.
CL-tRCD-tRP
Speed @CL3
Part Number
Density
128MB
256MB
512MB
256MB
512MB
CC(DDR400@CL=3)
200MHz
Organization
3-3-3
16M x 64
32M x 64
64M x 64
32M x 72
64M x 72
16Mx16( K4H561638D) * 4EA
32Mx8( K4H560838D) * 16EA
32Mx8( K4H560838D) * 18EA
32Mx8( K4H560838D) * 8EA
32Mx8( K4H560838D) * 9EA
Component Composition
C4(DDR400@CL=3)
Rev. 1.2 May. 2003
200MHz
3-4-4
DDR SDRAM
1,250(mil)
1,250(mil)
1,250(mil)
1,250(mil)
1,250(mil)
Height