M393T1G60CJA-CE6 SAMSUNG [Samsung semiconductor], M393T1G60CJA-CE6 Datasheet - Page 15

• Manufacturer Part Number: M393T1G60CJA-CE6
• Description: DDR2 Registered SDRAM MODULE
• Manufacturer: SAMSUNG [Samsung semiconductor]

11.1 M393T5663CZ3 / M393T5663CZA : 2GB(128Mx8 *18) Module
RDIMM
* Module IDD was calculated on the basis of component IDD and can be differently measured according to DQ loading cap.
11.0 Operating Current Table
11.2 M393T5663CZ3 / M393T5663CZA : 2GB(128Mx8 *18) Module
* IDD6 = DRAM current + standby current of PLL and Register
** Module IDD was calculated on the basis of component IDD and can be differently measured according to DQ loading cap.
IDD3P-F
IDD3P-S
IDD3P-F
IDD3P-S
Symbol
Symbol
IDD4W
IDD4W
IDD2P
IDD2Q
IDD2N
IDD3N
IDD4R
IDD5B
IDD2Q
IDD2P
IDD2N
IDD3N
IDD4R
IDD5B
IDD6*
IDD6*
IDD0
IDD1
IDD7
IDD0
IDD1
IDD7
F7(800@CL=6)
F7(800@CL=6)
1260
1350
1035
2025
3150
2115
2115
1950
2120
1520
1470
1540
1054
1595
2675
2905
2945
4180
270
810
900
810
324
270
910
270
- considering Register and PLL current value
E6(667@CL=5)
E6(667@CL=5)
1260
1800
1800
2025
2925
1170
1760
1920
1430
1310
1350
1435
2360
2480
2705
3795
270
810
810
720
324
945
270
850
954
270
15 of 26
D5(533@CL=4)
D5(533@CL=4)
1125
1215
1665
1575
1980
2745
1615
1765
1340
1240
1365
2135
2145
2510
3455
1160
270
810
810
630
324
945
270
790
854
270
CC(400@CL=3)
CC(400@CL=3)
Rev. 1.4 November 2007
1080
1170
1440
1395
1890
2520
1470
1610
1160
1080
1060
1205
1820
1855
2270
3070
270
720
720
630
324
855
270
730
754
270
DDR2 SDRAM
(T
(T
A
A
Unit
Unit
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
=0
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
=0
o
o
C, VDD= 1.9V)
C, VDD= 1.9V)
Notes
Notes