M470L2923DV0-CA2 SAMSUNG [Samsung semiconductor], M470L2923DV0-CA2 Datasheet
M470L2923DV0-CA2
Related parts for M470L2923DV0-CA2
M470L2923DV0-CA2 Summary of contents
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... Unbuffered SODIMM DDR SDRAM Unbuffered Module 184pin Unbuffered Module based on 512Mb D-die 66 TSOP-II & 54 sTSOP-II with Pb-Free INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY ...
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... DC Operating Conditions............................................................................................................ 9 9.0 DDR SDRAM IDD spec table ..................................................................................................... 10 9.1 M470L3324DU0 [ (32M x 16 256MB Non ECC Module ] 9.2 M470L6524DU0 [ (32M x 16 512MB Non ECC Module ] 9.3 M470L2923DV0 [ (64M 16, 1GB Non ECC Module ] 10.0 AC Operating Conditions........................................................................................................ 12 11.0 Input/Output Capacitance ....................................................................................................... 12 12.0 AC Timming Parameters & Specifications ............................................................................ 13 13.0 System Characteristics for DDR SDRAM .............................................................................. 14 14 ...
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Unbuffered SODIMM Revision History Revision Month Year 0.0 April 2005 0.2 June 2005 - First version for internal review - Changed master format. Preliminary DDR SDRAM History Rev. 0.1 June 2005 ...
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... Unbuffered SODIMM 200Pin Unbuffered SODIMM based on 512Mb D-die (x8, x16) 1.0 Ordering Information Part Number M470L3324DU0-C(L)CC/B3/A2/B0 M470L6524DU0-C(L)CC/B3/A2/B0 M470L2923DV0-C(L)CC/B3/A2/B0 2.0 Operating Frequencies CC(DDR400@CL=3) Speed @CL2 Speed @CL2.5 166MHz Speed @CL3 200MHz CL-tRCD-tRP 3-3-3 3.0 Feature • VDD : 2.5V ± 0.2V, VDDQ : 2.5V ± 0.2V for DDR266, 333 • VDD : 2.6V ± 0.1V, VDDQ : 2.6V ± 0.1V for DDR400 • ...
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... DQS4 Note : These pins are not used in this module. 2. Pins 71, 72, 73, 74, 77, 78, 79, 80, 83, 84 are not used on x64(M470~ ) module, & used on x72(M485 ~ ) module. 3. Pins 95,122 are NC for 1Row module & used for 2Row moule(M470L6524DU0). 5.0 Pin Description Pin Name A0 ~ A12 ...
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... Unbuffered SODIMM 6.0 Functional Block Diagram 6.1 256MB, 32M x 64 Non ECC Module (M470L3324DU0) (Populated as 1 bank of x16 DDR SDRAM Module) CS0 DQS0 LDQS CS DM0 LDM I/0 11 DQS1 UDQS ...
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... Unbuffered SODIMM 6.2 512MB, 64M x 64 Non ECC Module (M470L6524DU0) (Populated as 2 bank of x16 DDR SDRAM Module) CS1 CS0 DQS0 LDQS CS DM0 LDM I/0 8 DQS1 UDQS DM1 UDM ...
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... Unbuffered SODIMM 6.3 1GB, 128M x 64 Non ECC Module (M470L2923DV0) (Populated as 2 bank of x8 DDR SDRAM Module) CS0 DQS0 DM0 DM CS DQ0 I/O 0 I/O 0 DQ1 I/O 1 I/O 1 DQ2 I DQ3 I/O 3 I/O 3 I/O 4 I/O 4 DQ4 I/O 5 I/O 5 DQ5 DQ6 I/O 6 I/O 6 I/O 7 I/O 7 DQ7 DQS1 DM1 ...
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Unbuffered SODIMM 7.0 Absolute Maximum Ratings Parameter Voltage on any pin relative Voltage on V & V supply relative DDQ Storage temperature Power dissipation Short circuit current Note : Permanent device ...
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... IDD4R 1,000 IDD4W 1,100 IDD5 1,120 Normal 40 IDD6 Low power 24 IDD7A 1,840 * Module IDD was calculated on the basis of component IDD and can be differently measured according to DQ loading cap. 420 380 560 520 20 20 120 120 100 100 120 120 180 ...
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... Unbuffered SODIMM 9.3 M470L2923DV0 [ (128M x 64) 1GB Module ] Symbol CC(DDR400@CL=3) B3(DDR333@CL=2.5) A2(DDR266@CL=2) B0(DDR266@CL=2.5) IDD0 1,440 IDD1 1,680 IDD2P 80 IDD2F 480 IDD2Q 400 IDD3P 720 IDD3N 960 IDD4R 1,720 IDD4W 1,880 IDD5 2,240 Normal 80 IDD6 Low power 48 IDD7A 3,560 * Module IDD was calculated on the basis of component IDD and can be differently measured according to DQ loading cap. ...
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... CIN1 41 CIN2 34 CIN3 34 CIN4 25 CIN5 6 Cout1 6 Preliminary DDR SDRAM Min Max Unit VREF + 0.31 VREF - 0.31 0.7 VDDQ+0.6 0.5*VDDQ-0.2 0.5*VDDQ+0.2 V REF =0.5*V DDQ ( TA= 25°C, f=100MHz) M470L6524DU0 M470L2923DV0 Max Min Max Min Rev. 0.1 June 2005 ...
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Unbuffered SODIMM 12.0 AC Timming Parameters & Specifications Parameter Row cycle time Refresh row cycle time Row active time RAS to CAS delay Row precharge time Row active to Row active delay Write recovery time Last data ...
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Unbuffered SODIMM 13.0 System Characteristics for DDR SDRAM The following specification parameters are required in systems using DDR333, DDR266 devices to ensure proper system performance. these characteristics are for system simulation purposes and are guaranteed by design. ...
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Unbuffered SODIMM 14.0 Component Notes 1. All voltages referenced to Vss. 2. Tests for ac timing, IDD, and electrical, ac and dc characteristics, may be conducted at nominal reference/supply voltage levels, but the related speci- fications and ...
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Unbuffered SODIMM 15.0 System Notes: a. Pullup slew rate is characteristized under the test conditions as shown in Figure 2. b. Pulldown slew rate is measured under the test conditions shown in Figure 3. c. Pullup slew ...
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Unbuffered SODIMM 16.0 Command Truth Table COMMAND Register Extended MRS Register Mode Register Set Auto Refresh Entry Refresh Self Refresh Bank Active & Row Addr. Auto Precharge Disable Read & Column Address Auto Precharge Enable Auto Precharge ...
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Unbuffered SODIMM 17.0 Physical Dimensions 17.1 32M x 64 (M470L3324DU0) ± 0.16 0.039 ± (4.00 0.10) 1 0.086 0.456 2.15 11.40 0.07 (1.8+/-0.1) 0.098 2.45 2 0.150 Max (3.80 Max) ± 0.04 0.0039 ± (1.00 0.10) Tolerances ...
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Unbuffered SODIMM 17.2 64Mx64 (M470L6524DU0) ± 0.16 0.039 ± (4.00 0.10) 1 0.086 0.456 2.15 11.40 0.07 (1.8+/-0.1) 0.098 2.45 2 0.150 Max (3.80 Max) ± 0.04 0.0039 ± (1.00 0.10) Tolerances : ±.006(.15) unless otherwise specified ...
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Unbuffered SODIMM 17.3 128Mx64 (M4702923DV0) ± 0.16 0.039 ± (4.00 0.10) 1 0.086 0.456 2.15 11.40 0.07 (1.8) 0.098 2.45 2 0.150 Max (3.80 Max) ± 0.04 0.0039 ± (1.00 0.10) Tolerances : ±.006(.15) unless otherwise specified ...