M470L6423EN0-A2 SAMSUNG [Samsung semiconductor], M470L6423EN0-A2 Datasheet - Page 11

• Manufacturer Part Number: M470L6423EN0-A2
• Description: 512MB Unbuffered SODIMM(based on sTSOP)
• Manufacturer: SAMSUNG [Samsung semiconductor]

512MB Unbuffered SODIMM(based on sTSOP)
8. I/O Setup/Hold Plateau Derating
9. I/O Delta Rise/Fall Rate(1/slew-rate) Derating
10. This parameter is fir system simulation purpose. It is guranteed by design.
11. For each of the terms, if not already an integer, round to the next highest integer. tCK is actual to the system clock cycle time.
<Reference>
The following table specifies derating values for the specifications listed if the single-ended clock skew rate is less than 1.0V/ns.
This derating table is used to increase tDS/tDH in the case where the input level is flat below VREF ± 310mV for a duration of
This derating table is used to increase t
up to 2ns.
is calated as 1/SlewRate1-1/SlewRate2. For example, if slew rate 1 = 5V/ns and slew rate 2 =.4V/ns then the Delta Rise/Fall
Rate =-0/5ns/V. Input S/H slew rate based on larger of AC-AC delta rise/fall rate and DC-DC delta rise/fall rate.
(Single ended)
CK slew rate
Delta Rise/Fall Rate
0.75V/ns
1.0V/ns
0.5V/ns
I/O Input Level
(ns/V)
(mV)
± 280
±0.25
±0.5
0
∆tIH/tIS
+100
(ps)
+50
0
DS
/t
∆tDS
∆tDS
+100
(ps)
+50
(ps)
+50
DH
0
in the case where the DQ and DQS slew rates differ. The Delta Rise/Fall Rate
∆tDSS/tDSH
+100
(ps)
+50
0
∆tDH
∆tDH
+100
(ps)
+50
(ps)
+50
0
∆tAC/tDQSCK
+100
(ps)
+50
0
∆tLZ(min)
-100
(ps)
-50
0
Rev. 1.3 March. 2004
∆tHZ(max)
+100
(ps)
+50
0
DDR SDRAM