M470T2953CZ0-CCC SAMSUNG [Samsung semiconductor], M470T2953CZ0-CCC Datasheet - Page 12

• Manufacturer Part Number: M470T2953CZ0-CCC
• Description: DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 512Mb C-die 64bit Non-ECC
• Manufacturer: SAMSUNG [Samsung semiconductor]

Operating Current Table(1-2)
M470T2953CZ3/M470T2953CZ0 : 128Mx64 1GB Module
* Module IDD was calculated on the basis of component IDD and can be differently measured according to DQ loading cap.
Input/Output Capacitance
* DM is internally loaded to match DQ and DQS identically.
256MB, 512MB, 1GB Unbuffered SODIMMs
Input capacitance, CK and CK
Input capacitance, CKE , CS, Addr, RAS, CAS, WE
Input/output capacitance, DQ, DM, DQS, DQS
IDD3P-S
IDD3P-F
Symbol
IDD4W
IDD2Q
IDD2P
IDD2N
IDD3N
IDD4R
IDD0
IDD1
IDD5
IDD6
IDD7
CE7
Parameter
Non-ECC
800@CL=5
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
LE7
(VDD=1.8V, VDDQ=1.8V, TA=25
1,000
1,120
1,440
1,480
1,520
2,080
CE6
(T
128
560
640
480
192
760
128
A
667@CL=5
=0
o
C, VDD= 1.9V)
CCK
CI
CIO(400/533)
CIO(667/800)
Symbol
1,320
1,360
1,360
1,720
LE6
800
880
480
560
400
128
640
80
64
1,040
1,240
1,280
1,400
2,040
CD5
920
128
480
560
480
192
680
128
M470T6554CZ3
M470T6554CZ0
Min
533@CL=4
-
-
-
-
o
C)
1,120
1,160
1,240
1,680
Max
LD5
760
840
400
480
400
128
560
72
64
32
34
10
9
M470T3354CZ3
M470T3354CZ0
Min
1,040
1,160
1,160
1,400
2,040
-
-
-
-
CCC
920
128
480
560
480
192
680
128
400@CL=3
Max
5.5
24
34
6
1,000
1,040
1,240
1,680
LCC
760
840
400
480
400
128
560
72
64
Rev. 1.2 Aug. 2005
DDR2 SDRAM
M470T2953CZ3
M470T2953CZ0
Min
-
-
-
-
Unit
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
Max
48
42
10
9
Notes
Units
pF