HS9-6617RH INTERSIL [Intersil Corporation], HS9-6617RH Datasheet
HS9-6617RH
Manufacturer Part Number
HS9-6617RH
Description
Radiation Hardened 2K x 8 CMOS PROM
Manufacturer
INTERSIL [Intersil Corporation]
Datasheet
1.HS9-6617RH.pdf
(3 pages)
Available stocks
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Quantity
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HS9-6617RH
Manufacturer:
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Quantity:
298
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HS9-6617RH-8
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Radiation Hardened 2K x 8 CMOS PROM
Intersil’s Satellite Applications Flow
tested and guaranteed to 100kRAD total dose. These QML
Class T devices are processed to a standard flow intended
to meet the cost and shorter lead-time needs of large
volume satellite manufacturers, while maintaining a high
level of reliability.
The Intersil HS-6617RH-T is a radiation hardened 16k
CMOS PROM, organized in a 2K word by 8-bit format. The
chip is manufactured using a radiation hardened CMOS
process, and is designed to be functionally equivalent to the
HM-6617. Synchronous circuit design techniques combine
with CMOS processing to give this device high speed
performance with very low power dissipation.
On chip address latches are provided, allowing easy
interfacing with recent generation microprocessors that use
multiplexed address/data bus structure, such as the
HS-80C86RH. The output enable control (G) simplifies
microprocessor system interfacing by allowing output data
bus control, in addition to, the chip enable control.
Synchronous operation of the HS-6617RH-T is ideal for high
speed pipe-lined architecture systems and also in
synchronous logic replacement functions.
Specifications
Specifications for Rad Hard QML devices are controlled by
the Defense Supply Center in Columbus (DSCC). The SMD
numbers listed below must be used when ordering.
Detailed Electrical Specifications for the HS-6617RH-T
are contained in SMD 5962-95708. A “hot-link” is provided
from our website for downloading.
www.intersil.com/spacedefense/newsafclasst.asp
Intersil’s Quality Management Plan (QM Plan), listing all
Class T screening operations, is also available on our
website.
www.intersil.com/quality/manuals.asp
Ordering Information
NOTE:
distribution, or 450 units direct.
5962R9570801TJC
HS1-6617RH/Proto
5962R9570801TXC
HS9-6617RH/Proto
ORDERING
Minimum order quantity for -T is 150 units through
NUMBER
HS1-6617RH-T
HS1-6617RH/Proto
HS9-6617RH-T
HS9-6617RH/Proto
PART NUMBER
1
TM
Data Sheet
(SAF) devices are fully
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
-55 to 125
-55 to 125
-55 to 125
-55 to 125
RANGE
TEMP.
(
o
C)
Features
• QML Class T, Per MIL-PRF-38535
• Radiation Performance
• Field Programmable Nicrome Fuse Links
• Low Standby Power 1.1mW Max
• Low Operating Power 137.5mW/MHz Max
• Fast Access Time 100ns Max
• TTL Compatible Inputs/Outputs
• Synchronous Operation
• On Chip Address Latches, Three-State Outputs
Pinouts
†
www.intersil.com or 407-727-9207
- Gamma Dose ( ) 1 x 10
- SEU LET 16MeV/mg/cm
- SEL LET 100MeV/mg/cm
P must be hardwired at all times to V
programming.
Satellite Applications Flow™ (SAF) is a trademark of Intersil Corporation.
GND
Q0
Q1
Q2
A7
A6
A5
A4
A3
A2
A1
A0
HS9-6617RH-T (FLATPACK), CDFP4-F24
HS1-6617RH-T (SBDIP), CDIP2-T24
July 1999
GND
Q0
Q1
Q2
A7
A6
A5
A4
A3
A2
A1
A0
10
11
12
1
2
3
4
5
6
7
8
9
1
2
3
4
5
6
7
8
9
10
11
12
TOP VIEW
TOP VIEW
5
2
|
RAD(Si)
2
Copyright
File Number 4608.1
HS-6617RH-T
DD
24
23
22
21
20
19
18
17
16
15
14
13
, except during
24
23
22
21
20
19
18
17
16
15
14
13
©
Intersil Corporation 1999
V
A8
A9
P
G
A10
E
Q7
Q6
Q5
Q4
Q3
DD
V
A8
A9
P †
G
A10
E
Q7
Q6
Q5
Q4
Q3
DD
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HS9-6617RH Summary of contents
Page 1
... Fast Access Time 100ns Max • TTL Compatible Inputs/Outputs • Synchronous Operation • On Chip Address Latches, Three-State Outputs Pinouts HS1-6617RH-T (SBDIP), CDIP2-T24 GND HS9-6617RH-T (FLATPACK), CDFP4-F24 TEMP. A4 RANGE -55 to 125 A1 A0 -55 to 125 Q0 -55 to 125 ...
Page 2
Functional Diagram MSB A10 A9 LATCHED A8 ADDRESS A7 A6 REGISTER A5 A4 LSB ALL LINES POSITIVE LOGIC: ACTIVE HIGH THREE STATE BUFFERS: A HIGH OUTPUT ACTIVE Timing Waveform ADDRESSES 1.5V E TEHEL G DATA OUTPUT ...
Page 3
Die Characteristics DIE DIMENSIONS: (4166 m x 6350 m x 483 m 25.4 m) 164 x 250 x 19mils 1mil METALLIZATION: Type: Silicon - Aluminum Å Å Thickness: 13.0k 2k SUBSTRATE POTENTIAL Metallization Mask Layout A2 (6) A1 ...