HYS64V1000GU-50 SIEMENS [Siemens Semiconductor Group], HYS64V1000GU-50 Datasheet

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HYS64V1000GU-50

Manufacturer Part Number
HYS64V1000GU-50
Description
3.3V 1M x 64-Bit SDRAM Module 3.3V 1M x 72-Bit SDRAM Module
Manufacturer
SIEMENS [Siemens Semiconductor Group]
Datasheet
3.3V 1M x 64-Bit SDRAM Module
3.3V 1M x 72-Bit SDRAM Module
168 pin unbuffered DIMM Modules
Semiconductor Group
Target Information
168 Pin JEDEC Standard, Unbuffered 8 Byte
Dual-In-Line SDRAM Module
1 bank 1M x 64, 1M x 72 organisation
Optimized for byte-write non-parity or ECC applications
JEDEC standard Synchronous DRAMs (SDRAM)
Performance:
Single +3.3V( 0.3V ) power supply
Programmable CAS Latency, Burst Length and Wrap Sequence
Auto Refresh (CBR) and Self Refresh
Decoupling capacitors mounted on substrate
All inputs, outputs are LVTTL compatible
Serial presence detects
Utilizes four / five 1M x 16 SDRAMs in TSOPII-50 packages
4096 refresh cycles every 64 ms
Gold contact pad
Card Size: 133,35mm x 25,40mm x 3,00 mm
This SDRAM product familiy is intended to be fully pin and architecture compatible with the 168
pin Unbuffered DRAM DIMM module family.
f
t
t
CK
CK3
AC3
Clock frequency
Clock cycle time
Clock access time
CAS latency = 3
100
-10
10
9
-12
83
12
11
1
1
-15
66
15
13
Units
MHz
ns
ns
HYS64V1000GS-10/-12/-15
HYS72V1000GS-10/-12/-15
4.96

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HYS64V1000GU-50 Summary of contents

Page 1

... SDRAM Module 3. 72-Bit SDRAM Module 168 pin unbuffered DIMM Modules Target Information 168 Pin JEDEC Standard, Unbuffered 8 Byte • Dual-In-Line SDRAM Module 1 bank organisation • Optimized for byte-write non-parity or ECC applications • JEDEC standard Synchronous DRAMs (SDRAM) • ...

Page 2

... The HYS64(72)V1000GS-10/-12/-15 are industry standard 168-pin 8-byte Dual in-line Memory Modules (DIMMs) which are organised and high speed memory arrays designed with Synchronous DRAMs (SDRAMs) for non-parity and ECC applications. The DIMMs use four SDRAMs for the organisation and an additional SDRAM for the organisation ...

Page 3

... DQ30 118 DQ31 119 VSS 120 CLK2 121 NC 122 NC 123 SDA 124 SCL 125 VCC 126 3 HYS64(72)V1000GS-10/-12/- 64/72 SDRAM-Module Symbol PIN # Symbol VSS 127 VSS DQ32 128 CKE DQ33 129 CS3 DQ34 130 DQMB6 DQ35 131 DQMB7 VCC 132 ...

Page 4

... DQ0-DQ7 DQ16-DQ23 UDQM DQMB3 DQ8-DQ15 DQ24-DQ31 A0-A10, VCC C1-C4 VSS RAS CAS CKE CLK0 Block Diagram for SDRAM DIMM module Semiconductor Group CS WE DQMB4 DQ32-DQ39 DQMB5 DQ40-DQ47 DQMB6 DQ48-DQ55 DQMB7 DQ56-DQ63 SA0 SA1 SA2 ...

Page 5

... DQ8-DQ15 CB0-CB3 CS2 LDQM DQMB2 DQ0-DQ7 DQ16-DQ23 UDQM DQMB3 DQ8-DQ15 DQ24-DQ31 A0-A10,BS VCC VSS RAS CAS CKE CLK0 Block DIagram for SDRAM - DIMM module Semiconductor Group CS WE DQMB4 DQ32-DQ39 DQMB5 DQ40-DQ47 LDQM CB4-CB7 DQ4-DQ7 1 DQMB6 DQ48-DQ55 DQMB7 DQ56-DQ63 ...

Page 6

... CKE=<VIL(max), tCK=15ns CKE=<VIL(max), tCK=Infinity CKE=>VIH(min), tCK=15ns Input Change in every 30ns CKE=>VIH(min),tCK=Infinity No Input Change tRC=>tRC(min) CAS Latency = 3 CKE=<0,2V tRC=tRC(min), tck>tck,min Io = 0mA CAS Latency=3,Burst = 4 6 HYS64(72)V1000GS-10/-12/- 64/72 SDRAM-Module Symbol Limit Values min. max. V 2.0 Vcc+0 – 0.5 0 2.4 – ...

Page 7

... For AC characteristics, detailed function description and waveforms see the SDRAM datasheet HYB39S164/8/160T. Semiconductor Group HYS64(72)V1000GS-10/-12/-15 0 MHz Symbol 64/72 SDRAM-Module Limit Values Unit min. max. – – – – – ...

Page 8

... Serial Presence Detect A serial presence detect storage device - E Information about the module configuration, speed, etc. is written into the E module production using a serial presence detect protocol ( I2C synchronous 2-wire bus) Byte# Description 0 Number of SPD bytes 1 Total bytes in Serial PD 2 Memory Type 3 Number of Row Addresses ...

Page 9

... L-DIM-168-15 SDRAM DIMM Module package Semiconductor Group HYS64(72)V1000GS-10/-12/- 64/72 SDRAM-Module 9 ...

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