HFD3N80 SEMIHOW [SemiHow Co.,Ltd.], HFD3N80 Datasheet - Page 3

• Manufacturer Part Number: HFD3N80
• Description: 800V N-Channel MOSFET
• Manufacturer: SEMIHOW [SemiHow Co.,Ltd.]

Typical Characteristics
1500
1200
900
600
300
0
10
Figure 3. On Resistance Variation vs
Figure 5. Capacitance Characteristics
Figure 1. On Region Characteristics
-1
Drain Current and Gate Voltage
V
V
DS
DS
, Drain-Source Voltage [V]
, Drain-Source Voltage [V]
I
D
10
, Drain Current [A]
0
C
C
C
oss
rss
iss
C
C
C
iss
oss
rss
= C
= C
= C
10
gs
gd
ds
1
+ C
+ C
※ Notes :
gd
gd
1. V
2. f = 1 MHz
(C
ds
GS
= shorted)
= 0 V
10
10
10
12
10
-1
8
6
4
2
0
1
0
0.2
0
Figure 4. Body Diode Forward Voltage
Figure 6. Gate Charge Characteristics
Figure 2. Transfer Characteristics
Variation with Source Current
0.4
4
150 ℃
V
V
Q
SD
GS
and Temperature
0.6
V
G
, Source-Drain voltage [V]
, Gate-Source Voltage [V]
, Total Gate Charge [nC]
V
DS
DS
V
= 640V
DS
= 400V
25℃
8
= 160V
0.8
12
1.0
※ Notes :
1. V
2. 250μ s Pulse Test
◎ SEMIHOW REV.A0,Dec 2005
※ Note : I
GS
= 0V
16
1.2
D
= 3.0A
1.4
20