GS882Z18B-100 ETC [List of Unclassifed Manufacturers], GS882Z18B-100 Datasheet

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GS882Z18B-100

Manufacturer Part Number
GS882Z18B-100
Description
8Mb Pipelined and Flow Through Synchronous NBT SRAMs
Manufacturer
ETC [List of Unclassifed Manufacturers]
Datasheet
119-Bump BGA
Commercial Temp
Industrial Temp
Features
• 512K x 18 and 256K x 36 configurations
• User-configurable Pipelined and Flow Through mode
• NBT (No Bus Turn Around) functionality allows zero wait
• Read-Write-Read bus utilization
• Fully pin-compatible with both pipelined and flow through
• IEEE 1149.1 JTAG-compatible Boundary Scan
• On-chip write parity checking; even or odd selectable
• ZQ mode pin for user selectable high/low output drive
• x16/x32 mode with on-chip parity encoding and error
• Pin-compatible with 2M, 4M and 16M devices
• 3.3 V +10%/–5% core power supply
• 2.5 V or 3.3 V I/O supply
• LBO pin for Linear or Interleave Burst mode
• Byte write operation (9-bit Bytes)
• 3 chip enable signals for easy depth expansion
• Clock Control, registered, address, data, and control
• ZZ Pin for automatic power-down
• JEDEC-standard 119-Bump BGA package
Rev: 1.15 6/2001
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
NoBL is a trademark of Cypress Semiconductor Corp.. NtRAM is a trademark of Samsung Electronics Co.. ZBT is a trademark of Integrated Device Technology, Inc.
Pipeline
3-1-1-1
Flow Through
2-1-1-1
NtRAM™, NoBL™ and ZBT™ SRAMs
strength.
detection
Flow Through
Read/Write
Pipelined
Address
Data I/O
Data I/O
Clock
t
t
Cycle
Cycle
t
I
t
I
KQ
DD
KQ
DD
A
R
210 mA
150 mA
4.5 ns
10 ns
11 ns
15 ns
Flow Through and Pipelined NBT SRAM Back-to-Back Read/Write Cycles
8Mb Pipelined and Flow Through
-11
Synchronous NBT SRAMs
210 mA
150 mA
4.5 ns
10 ns
12 ns
15 ns
Q
-100
A
W
B
190 mA
130 mA
12.5 ns
4.8 ns
14 ns
15 ns
-80
D
Q
B
A
C
R
170 mA
130 mA
15 ns
18 ns
20 ns
5 ns
1/34
-66
Functional Description
The GS882Z818/36B is an 8Mbit Synchronous Static SRAM.
GSI's NBT SRAMs, like ZBT, NtRAM, NoBL or other
pipelined read/double late write or flow through read/single
late write SRAMs, allow utilization of all available bus
bandwidth by eliminating the need to insert deselect cycles
when the device is switched from read to write cycles.
Because it is a synchronous device, address, data inputs, and
read/ write control inputs are captured on the rising edge of the
input clock. Burst order control (LBO) must be tied to a power
rail for proper operation. Asynchronous inputs include the
Sleep mode enable (ZZ) and Output Enable. Output Enable can
be used to override the synchronous control of the output
drivers and turn the RAM's output drivers off at any time.
Write cycles are internally self-timed and initiated by the rising
edge of the clock input. This feature eliminates complex off-
chip write pulse generation required by asynchronous SRAMs
and simplifies input signal timing.
The GS882Z818/36B may be configured by the user to
operate in Pipeline or Flow Through mode. Operating as a
pipelined synchronous device, in addition to the rising-edge-
triggered registers that capture input signals, the device
incorporates a rising-edge-triggered output register. For read
cycles, pipelined SRAM output data is temporarily stored by
the edge-triggered output register during the access cycle and
then released to the output drivers at the next rising edge of
clock.
The GS882Z818/36B is implemented with GSI's high
performance CMOS technology and is available in a JEDEC-
Standard 119-bump BGA package.
Q
D
C
B
W
D
Q
D
D
C
R
E
GS882Z18/36B-11/100/80/66
© 1998, Giga Semiconductor, Inc.
Q
D
E
D
2.5 V and 3.3 V V
W
F
100 MHz–66 MHz
Preliminary
Q
3.3 V V
E
DDQ
DD

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GS882Z18B-100 Summary of contents

Page 1

... NoBL is a trademark of Cypress Semiconductor Corp.. NtRAM is a trademark of Samsung Electronics Co.. ZBT is a trademark of Integrated Device Technology, Inc. Functional Description The GS882Z818/36B is an 8Mbit Synchronous Static SRAM. GSI's NBT SRAMs, like ZBT, NtRAM, NoBL or other pipelined read/double late write or flow through read/single late write SRAMs, allow utilization of all available bus bandwidth by eliminating the need to insert deselect cycles when the device is switched from read to write cycles ...

Page 2

GS882Z36 Pad Out Rev: 1.15 6/2001 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com 119-Bump BGA—Top View 1 ...

Page 3

GS882Z18 Pad Out Rev: 1.15 6/2001 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com 119-Bump BGA—Top View 1 ...

Page 4

GS882Z18/36 BGA Pin Description Pin Location Symbol P4, N4 A2, A3, A5, A6, B3, B5, C2, C3, C5, C6, G4, R2, R6, T3 T2, T6 T2, T6 K7, L7, N7, P7, K6, L6, M6, N6 H7, ...

Page 5

GS882Z18/36 BGA Pin Description Pin Location Symbol J2, C4, J4, R4, J6 D3, E3, F3, H3, K3, M3, N3, P3, D5, E5, F5, H5, K5, M5, N5, P5 A1, F1, J1, M1, U1, A7, F7, J7, ...

Page 6

... A B Cycle with no Byte Write inputs active is a no-op cycle. The pipelined NBT SRAM provides double late write functionality, matching the write command versus data pipeline length (2 cycles) to the read command versus data pipeline length (2 cycles). At the first rising edge of clock, Enable, Write, Byte Write(s), and Address are registered. The Data In associated with that address is required at the third rising edge of clock ...

Page 7

... Dummy read and write abort can be considered NOPs because the SRAM performs no operation. A Write abort occurs when the W pin is sampled low but no Byte Write pins are active Write operation is performed can be wired low to minimize the number of control signals provided to the SRAM. Output drivers will automatically turn off during Write cycles. 4. ...

Page 8

Pipeline and Flow Through Read-Write Control State Diagram New Read R R Burst Read B Key Input Command Code ƒ Transition Current State (n) Next State (n+1) n Clock (CK) Command Current State Current State and Next State Definition for ...

Page 9

Pipeline Mode Data I/O State Diagram Intermediate B W High Z (Data In) Key Input Command Code ƒ Transition Current State (n) Intermediate State (N+1) Clock (CK) Command Current State and Next State Definition for Rev: 1.15 6/2001 Specifications cited ...

Page 10

Flow Through Mode Data I/O State Diagram B W High Z (Data In) Key Input Command Code ƒ Transition Current State (n) Clock (CK) Command Current State and Next State Definition for: Rev: 1.15 6/2001 Specifications cited are subject to ...

Page 11

... SRAM to advance the internal address counter and use the counter generated address to read or write the SRAM. The starting address for the first cycle in a burst cycle series is loaded into the SRAM by driving the ADV pin low, into Load mode ...

Page 12

... During normal operation, ZZ must be pulled low, either by the user or by its internal pull down resistor. When ZZ is pulled high, the SRAM will enter a Power Sleep mode after 2 cycles. At this time, internal state of the SRAM is preserved. When ZZ returns to low, the SRAM operates normally after 2 cycles of wake up time. ...

Page 13

... Initialization of the memory should be implemented to avoid this issue. In x18/x36 mode this SRAM includes a write data parity check that checks the validity of data coming into the RAM on write cycles. In Flow Through mode, write data errors are reported in the cycle following the data input cycle. In Pipeline mode, write data errors are reported one clock cycle later ...

Page 14

Mode ( Write Parity Error Output Timing Diagram Rev: 1.15 6/2001 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com ...

Page 15

Absolute Maximum Ratings (All voltages reference Symbol Description V Voltage Voltage in V DDQ DDQ V Voltage on Clock Input Pin CK V Voltage on I/O Pins I/O V Voltage on ...

Page 16

... Junction to Ambient (at 200 lfm) Junction to Ambient (at 200 lfm) Junction to Case (TOP) Notes: 1. Junction temperature is a function of SRAM power dissipation, package thermal resistance, mounting board temperature, ambient. Temper- ature air flow, board density, and PCB thermal resistance. 2. SCMI G-38-87 3. Average thermal resistance between die and top surface, MIL SPEC-883, Method 1012.1 Rev: 1 ...

Page 17

AC Test Conditions Parameter Input high level Input low level Input slew rate Input reference level Output reference level Output load Notes: 1. Include scope and jig capacitance. 2. Test conditions as specified with output loading as shown in Fig. ...

Page 18

Operating Currents Parameter Test Conditions Device Selected; Operating All other inputs Current Output open Standby ZZ V – 0 Current Device Deselected; Deselect All other inputs Current Rev: ...

Page 19

AC Electrical Characteristics Parameter Clock Cycle Time Clock to Output Valid Pipeline Clock to Output Invalid Clock to Output in Low-Z Clock Cycle Time Clock to Output Valid Flow- through Clock to Output Invalid Clock to Output in Low-Z Clock ...

Page 20

Pipeline Mode Read/Write Cycle Timing CKE ADV – – Write Write COMMAND D(A2) D(A1) ...

Page 21

Pipeline Mode No-Op, Stall and Deselect Timing CKE ADV – Write D(A1) COMMAND *Note High (False ...

Page 22

Flow Through Mode Read/Write Cycle Timing CKE ADV – D(A1 Write COMMAND D(A1) *Note High ...

Page 23

Flow Through Mode No-Op, Stall and Deselect Timing CKE ADV W Bn – Write COMMAND D(A1) *Note High (False ...

Page 24

JTAG Port Operation Overview The JTAG Port on this RAM operates in a manner consistent with IEEE Standard 1149.1-1990, a serial boundary scan interface standard (commonly referred to as JTAG), but does not implement all of the functions required for ...

Page 25

Boundary Scan Register Boundary Scan Register is a collection of flip flops that can be preset by the logic level found on the RAM’s input or I/O pins. The flip flops are then daisy chained together so the levels found ...

Page 26

Tap Controller Instruction Set Overview There are two classes of instructions defined in the Standard 1149.1-1990; the standard (Public) instructions, and device specific (Private) instructions. Some Public instructions, are mandatory for 1149.1 compliance. Optional Public instructions must be implemented in ...

Page 27

SAMPLE/PRELOAD SAMPLE/PRELOAD is a Standard 1149.1 mandatory public instruction. When the SAMPLE/PRELOAD instruction is loaded in the Instruc- tion Register, moving the TAP controller into the Capture-DR state loads the data in the RAMs input and I/O buffers into the ...

Page 28

JTAG TAP Instruction Set Summary Instruction Code Replicates BYPASS instruction. Places Bypass Register between TDI and TDO. EXTEST 000 This RAM does not implement 1149.1 EXTEST function. *Not 1149.1 Compliant * IDCODE 001 Preloads ID Register and places it between ...

Page 29

JTAG Port AC Test Conditions Parameter Input high level Input low level Input slew rate Input reference level Output reference level Notes: 1. Include scope and jig capacitance. JTAG Port Timing Diagram tTKH tTKL TCK TMS TDI TDO tTKQ JTAG ...

Page 30

GS882Z18/36B BGA Boundary Scan Register Bump x36 x18 x36 x18 n ...

Page 31

FLXDrive Output Driver Characteristics 120.0 100.0 Pull Down Drivers 80.0 60.0 40.0 20.0 0.0 -20.0 -40.0 -60.0 Pull Up Drivers -80.0 -100.0 -120.0 -140.0 -0 Rev: 1.15 6/2001 Specifications cited are subject to ...

Page 32

Package Dimensions—119-Bump PBGA A Pin 1 Corner P N Top View Side View Rev: 1.15 6/2001 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com Bottom View Package Dimensions—119-Bump PBGA Symbol ...

Page 33

... GS882Z18B-80 512K x 18 GS882Z18B-66 256K x 36 GS882Z36B-11 256K x 36 GS882Z36B-100 256K x 36 GS882Z36B-80 256K x 36 GS882Z36B-66 512K x 18 GS882Z18B-11I 512K x 18 GS882Z18B-100I 512K x 18 GS882Z18B-80I 512K x 18 GS882Z18B-66I 256K x 36 GS882Z36B-11I 256K x 36 GS882Z36B-100I 256K x 36 GS882Z36B-80I 256K x 36 GS882Z36B-66I Notes: 1. Customers requiring delivery in Tape and Reel should add the character “ ...

Page 34

Revision History Types of Changes DS/DateRev. Code: Old; Format or Content New GS882Z818/36BRev1.04h 5/ 1999; 1.05 9/1999 GS882Z818/36B 1.05 9/ 1999K/ 1.06 10/1999 GS882Z818/36B 1.06 9/ 1999K 1.07 1/2000L Rev.1.10; 882Z18_r1_11 Content/Format 882Z18_r1_11; 882Z18_r1_12 882Z18_r1_12; 882Z18_r1_13 882Z18_r1_13; 882Z18_r1_14 882Z18_r1_14; 882Z18_r1_15 ...

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