GS882Z18BB-150I GSI [GSI Technology], GS882Z18BB-150I Datasheet - Page 28

• Manufacturer Part Number: GS882Z18BB-150I
• Description: 9Mb Pipelined and Flow Through Synchronous NBT SRAM
• Manufacturer: GSI [GSI Technology]

JTAG Port Recommended Operating Conditions and DC Characteristics
Rev: 1.02 10/2004
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Notes:
1.
2.
3.
4.
5.
6.
7.
8.
9.
Input Under/overshoot voltage must be –2 V > Vi < V
V
0 V ≤ V
Output Disable, V
The TDO output driver is served by the V
I
I
I
I
OHJ
OLJ
OHJC
OHJC
ILJ
= + 4 mA
= –4 mA
≤ V
= –100 uA
= +100 uA
IN
IN
TMS, TCK and TDI Input Leakage Current
TMS, TCK and TDI Input Leakage Current
≤ V
≤ V
3.3 V Test Port Input High Voltage
2.5 V Test Port Input High Voltage
3.3 V Test Port Input Low Voltage
2.5 V Test Port Input Low Voltage
TDO Output Leakage Current
Test Port Output High Voltage
ILJn
DDn
Test Port Output Low Voltage
Test Port Output CMOS High
Test Port Output CMOS Low
OUT
= 0 to V
Parameter
DDn
DDQ
supply.
DDn
28/34
+2 V not to exceed 4.6 V maximum, with a pulse width not to exceed 20% tTKC.
Symbol
V
V
V
V
V
V
V
I
V
I
I
INHJ
OHJC
INLJ
OLJC
OLJ
IHJ3
IHJ2
ILJ3
ILJ2
OHJ
OLJ
GS882Z18/36BB/D-333/300/250/200/150
V
DDQ
0.6 * V
Min.
–300
–0.3
–0.3
– 100 mV
2.0
1.7
–1
–1
—
—
DD2
0.3 * V
V
V
100 mV
DD3
DD2
Max.
100
0.8
0.4
—
—
1
1
+0.3
+0.3
DD2
© 2001, GSI Technology
Unit Notes
uA
uA
uA
V
V
V
V
V
V
V
V
5, 6
5, 7
5, 8
5, 9
1
1
1
1
2
3
4