M54HC10D STMICROELECTRONICS [STMicroelectronics], M54HC10D Datasheet - Page 4
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M54HC10D
Manufacturer Part Number
M54HC10D
Description
RAD-HARD TRIPLE 3-INPUT NAND GATE
Manufacturer
STMICROELECTRONICS [STMicroelectronics]
Datasheet
1.M54HC10D.pdf
(8 pages)
M54HC10
AC ELECTRICAL CHARACTERISTICS (C
CAPACITIVE CHARACTERISTICS
1) C
load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. I
TEST CIRCUIT
C
R
4/8
t
t
Symbol
Symbol
L
T
PLH
TLH
= 50pF or equivalent (includes jig and probe capacitance)
= Z
C
C
PD
PD
IN
t
t
OUT
is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without
THL
PHL
of pulse generator (typically 50 )
Output Transition
Time
Propagation Delay
Time
Input Capacitance
Power Dissipation
Capacitance (note
1)
Parameter
Parameter
V
V
(V)
2.0
4.5
6.0
2.0
4.5
6.0
(V)
5.0
5.0
CC
CC
Test Condition
Test Condition
L
= 50 pF, Input t
Min.
Min.
T
T
A
A
r
Typ.
Typ.
= 25°C
= 25°C
30
27
23
= t
8
7
9
8
5
f
= 6ns)
Max.
Max.
75
15
13
75
15
13
10
Value
Value
CC(opr)
Min.
Min.
-40 to 85°C
-40 to 85°C
= C
Max.
Max.
95
19
16
95
19
16
10
PD
x V
CC
-55 to 125°C
-55 to 125°C
Min.
Min.
x f
IN
+ I
Max.
Max.
CC
110
110
22
19
22
19
10
/3 (per gate)
Unit
Unit
pF
pF
ns
ns