HX6408-EFM HONEYWELL [Honeywell Solid State Electronics Center], HX6408-EFM Datasheet - Page 6

• Manufacturer Part Number: HX6408-EFM
• Description: 512k x 8 STATIC RAM
• Manufacturer: HONEYWELL [Honeywell Solid State Electronics Center]

HX6408
Advanced Information
DATA RETENTION CHARACTERISTICS
TESTER EQUIVALENT LOAD CIRCUIT
Tester AC Timing Characteristics
6
(1) Typical operating conditions: TA=25°C, pre-radiation.
(2) Worst case operating conditions: TA=-55°C to +125°C, post dose at 25°C
Symbol
VDR
IDR
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* C
Input Levels *
Output Sense
Levels
DUT
Output
High Z = VDD/2
* Input rise and fall times <5 ns.
L
= 5pf for TWQZ, TSHQZ, TPLQZ, and TGHQZ
Parameter
Data Retention Voltage
Data Retention Current
1.9V
249
C
VDD
L
VSS
High Z
< 50 pf *
Typical
(1)
(VDD/2) + 0.2V
(VDD/2) - 0.2V
V1
V2
Worst Case (2)
Min
2.0
VDD – 0.4V
0.4V
Max
3
VDD/2
High Z
Units
mA
V
Valid High
Output
Valid Low
Output
Test Conditions
NCS=VDR
VI=VDR or VSS
VI=VRD or VSS
NCS=VDD=VDR