HYB514100BJ-50- SIEMENS [Siemens Semiconductor Group], HYB514100BJ-50- Datasheet - Page 7
HYB514100BJ-50-
Manufacturer Part Number
HYB514100BJ-50-
Description
4M x 1-Bit Dynamic RAM
Manufacturer
SIEMENS [Siemens Semiconductor Group]
Datasheet
1.HYB514100BJ-50-.pdf
(21 pages)
AC Characteristics (cont’d)
T
Parameter
Fast Page Mode Cycle
Fast page mode cycle time
CAS precharge time
Access time from CAS precharge
RAS pulse width
CAS precharge to RAS Delay
Fast Page Mode Read-Modify-Write Cycle
Fast page mode read-write cycle time
CAS precharge to WE
CAS-before-RAS Refresh Cycle
CAS setup time
CAS hold time
RAS to CAS precharge time
Write to RAS precharge time
Write hold time referenced to RAS
CAS-before-RAS Counter Test Cycle
CAS precharge time
Test Mode
Write command setup time
Write command hold time
Semiconductor Group
A
= 0 to 70 C,
V
CC
= 5 V
5, 6
t
T
= 5 ns
Symbol
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
PC
CP
CPA
RAS
RHCP
PRWC
CPWD
CSR
CHR
RPC
WRP
WRH
CPT
WTS
WTH
7
min. max. min. max.
35
10
–
50
30
55
30
10
10
5
10
10
35
10
10
-50
Limit Values
–
–
30
200k
–
–
–
–
–
–
–
–
–
–
–
HYB 514100BJ-50/-60
40
10
–
60
35
60
35
10
10
5
10
10
40
10
10
-60
–
–
35
200k ns
–
–
–
–
–
–
–
–
–
–
–
4M
Unit Note
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
1998-10-01
1 DRAM
7