HYB514405BJ-50 SIEMENS [Siemens Semiconductor Group], HYB514405BJ-50 Datasheet - Page 6

• Manufacturer Part Number: HYB514405BJ-50
• Description: 1M x 4-Bit Dynamic RAM
• Manufacturer: SIEMENS [Siemens Semiconductor Group]

DC Characteristics (cont’d)
T
Parameter
Average
CAS before RAS refresh mode
For Low Power Version only:
Battery backup current (average power supply
current in battery backup mode):
(CAS = CAS before RAS cycling or 0.2 V,
WE =
A0 to A10 =
DI =
t
AC Characteristics
T
Parameter
Common Parameters
Random read or write cycle time
RAS precharge time
RAS pulse width
CAS pulse width
Row address setup time
Row address hold time
Column address setup time
Column address hold time
RAS to CAS delay time
RAS to column address delay
time
RAS hold time
Semiconductor Group
RC
A
A
= 0 to 70 ˚C,
= 0 to 70 ˚C,
= 125 s,
V
V
CC
CC
V
– 0.2 V or 0.2 V or open,
– 0.2 V or 0.2 V,
CC
V
supply current during
t
CC
RAS
V
V
– 0.2 V or 0.2 V;
SS
=
CC
t
= 0 V,
RAS
= 5 V
5)6)
-50 version
-60 version
-70 version
min = 1 s)
V
10 %, t
CC
= 5 V
Symbol
t
t
t
t
t
t
t
t
t
t
t
T
RC
RP
RAS
CAS
ASR
RAH
ASC
CAH
RCD
RAD
RSH
= 2 ns
10 %,
min.
89
35
50
8
0
8
0
8
12
10
13
t
T
= 2 ns
6
Symbol
I
I
-50
CC6
CC7
max. min.
–
–
10k
10k
–
–
–
–
37
25
Limit Values
HYB 514405BJ/BLJ-50/-60/-70
104
40
60
10
0
10
0
10
14
12
15
min.
–
–
–
–
Limit Values
-60
max. min.
–
–
10k
10k
–
–
–
–
45
30
–
max.
120
110
100
250
1M x 4 EDO - DRAM
124
50
70
12
0
10
0
12
14
12
17
-70
max.
–
–
10k
10k
–
–
–
–
53
35
–
Unit Test
mA
A
Condition
2)4)
–
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Note