KMM372C1600BK SAMSUNG [Samsung semiconductor], KMM372C1600BK Datasheet
KMM372C1600BK
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KMM372C1600BK Summary of contents
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... DRAM MODULE ABSOLUTE MAXIMUM RATINGS * Item Voltage on any pin relative V SS Voltage on V supply relative Storage Temperature Power Dissipation Short Circuit Output Current * Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for intended periods may affect device reliability ...
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... DRAM MODULE CAPACITANCE ( Vcc=5V 1MHz) A Item Input capacitance[A0-A10, B0] Input capacitance[W0, W2, OE0, OE2] Input capacitance[RAS0 , RAS2] Input capacitance[CAS0 , CAS4] Input/Output capacitance[DQ0 - CHARACTERISTICS ( Test condition : V /V =2.4/0.8V Parameter Random read or write cycle time Read-modify-write cycle time Access time from RAS ...
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... DRAM MODULE AC CHARACTERISTICS ( Test condition : V /V =2.4/0.8V Parameter RAS to W delay time CAS setup time(CAS-before-RAS refresh) CAS hold time(CAS-before-RAS refresh) RAS precharge to CAS hold time Access time from CAS precharge Fast page mode cycle time Fast page mode read-modify-write cycle time ...
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... DRAM MODULE NOTES 1. An initial pause of 200us is required after power-up followed by any 8 RAS-only or CAS-before-RAS refresh cycles before proper device operation is achieved. 2. Input voltage levels are Vih/Vil. V reference levels for measuring timing of input signals. Transi- tion times are measured between V are assumed to be 5ns for all inputs. ...
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... DRAM MODULE READ CYCLE RAS CAS ASR RAS t CSH CRP t RCD t RAD t t RAH ASC t CAH ROW COLUMN ADDRESS ADDRESS t RCS CLZ t RAC OPEN KMM372C213CK/ ...
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... DRAM MODULE WRITE CYCLE ( EARLY WRITE ) NOTE : D = OPEN OUT RAS CAS ASR ADDRESS RAS t CSH CRP t RCD t RAD t t RAH ASC t CAH ROW COLUMN ADDRESS t CWL t RWL ...
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... DRAM MODULE WRITE CYCLE ( OE CONTROLLED WRITE ) NOTE : D = OPEN OUT RAS CAS ASR ADDRESS RAS t CSH CRP t RCD t RAD t t RAH ASC t CAH ROW COLUMN ADDRESS t OED t DS ...
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... DRAM MODULE READ - MODIFY - WRTIE CYCLE RAS CRP CAS ASR ROW A ADDR I/ I/OL t RWC t RAS t t RCD RSH t CAS t RAD t t RAH ASC t CAH COLUMN ADDRESS t AWD t CWD t RWD ...
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... DRAM MODULE FAST PAGE READ CYCLE NOTE : D = OPEN OUT RAS CRP CAS ASR ROW A ADDR RASP ¡ó RCD t CAS t CAS t RAD ¡ó t ASC ...
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... DRAM MODULE FAST PAGE WRITE CYCLE ( EARLY WRITE ) NOTE : D = OPEN OUT RAS CRP CAS ASR ROW A ADDR RASP RCD CAS t RAD t ASC t CSH ...
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... DRAM MODULE FAST PAGE READ - MODIFY - WRITE CYCLE RAS RCD CAS RAD t ASR ROW A ADDR I/ I/OL t CSH t CAS t RAH t CAH t ASC COL. ADDR t RCS t CWL CWD t AWD t RWD ...
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... DRAM MODULE RAS - ONLY REFRESH CYCLE NOTE : W, OE Don t care OPEN OUT RAS CRP CAS ASR ROW A ADDR CAS - BEFORE - RAS REFRESH CYCLE NOTE : OE Don t care RAS CAS ...
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... DRAM MODULE HIDDEN REFRESH CYCLE ( READ ) RAS CRP CAS ASR ADDRESS RAS t t RCD RSH t RAD t t RAH ASC t CAH ROW COLUMN ADDRESS t RCS OEA ...
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... DRAM MODULE HIDDEN REFRESH CYCLE ( WRITE ) NOTE : D = OPEN OUT RAS CAS ASR ADDRESS RAS CRP t t RCD RSH t RAD t t RAH ASC t CAH ROW COLUMN ADDRESS ...
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... DRAM MODULE CAS-BEFORE-RAS REFRESH COUNTER TEST CYCLE RAS CSR CAS READ CYCLE t WRP WRITE CYCLE t WRP READ-MODIFY-WRITE t WRP ...
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... DRAM MODULE CAS - BEFORE - RAS SELF REFRESH CYCLE NOTE : OE Don t care RAS CAS TEST MODE IN CYCLE NOTE : OE Don t care RAS CAS ...
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... DRAM MODULE PACKAGE DIMENSIONS 0.118 (3.000) A .118DIA .004 (3.000DIA .100) 0.350 (8.890) .450 (11.430) 0.250 (6.350) 0.123 .005 (3.125 .125) 0.079 .004 (2.000 .100) Detail A Tolerances : .005(.13) unless otherwise specified The used device is 2Mx8 DRAM with Fast Page mode, SOJ or TSOP II (Forward). ...