KMM372F803BK SAMSUNG [Samsung semiconductor], KMM372F803BK Datasheet - Page 5

• Manufacturer Part Number: KMM372F803BK
• Description: 8M x 72 DRAM DIMM with ECC using 8Mx8, 4K 8K Refresh, 3.3V
• Manufacturer: SAMSUNG [Samsung semiconductor]

DRAM MODULE
AC CHARACTERISTICS
Column address to W delay time
CAS precharge time to W delay time
CAS setup time(CAS-before-RAS refresh)
CAS hold time(CAS-before-RAS refresh)
RAS to CAS precharge time
Access time from CAS precharge
Hyper page cycle time
Hyper page read-modify-write cycle time
CAS precharge time(Hyper page cycle)
RAS pulse width (Hyper page cycle)
RAS hold time from CAS precharge
W to RAS precharge time(C-B-R refresh)
W to RAS hold time(C-B-R refresh)
OE access time
OE to data delay
Output buffer turn off delay time from OE
OE command hold time
Output data hold time(C-B-R refresh)
Output buffer turn off delay time from RAS
Output buffer turn off delay time from W
W to data delay
OE to CAS hold time
CAS hold time to OE
OE precharge time
PDE to Valid PD bit
PDE to PD bit Inactive
W pulse width (Hyper page cycle)
Present Detect Read Cycle
Parameter
(0 C T
A
70 C, V
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
AWD
CPWD
CSR
CHR
RPC
CPA
HPC
HPRWC
CP
RASP
RHCP
WRP
WRH
OEA
OED
OEZ
OEH
DOH
REZ
WEZ
WED
OCH
CHO
OEP
WPE
PD
PDOFF
Symbol
CC
=3.3V 0.3V. See notes 1,2.)
Min
45
47
10
20
70
50
35
15
15
10
20
8
3
7
8
8
5
3
8
5
5
5
5
2
-5
200K
Max
33
18
18
13
18
10
7
Min
53
58
10
25
77
10
60
40
15
18
10
20
KMM372F80(8)3BK/BS
8
3
8
8
5
3
8
5
5
5
5
2
-6
200K
Max
40
20
18
13
18
10
7
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Note
3,13
6,11
6,13
13
13
13
12
12
13
13
13
13
13
13
13
13
7