K4H280438F SAMSUNG [Samsung semiconductor], K4H280438F Datasheet - Page 16

• Manufacturer Part Number: K4H280438F
• Description: 128Mb F-die DDR SDRAM Specification
• Manufacturer: SAMSUNG [Samsung semiconductor]

DDR SDRAM 128Mb F-die (x4, x8)
AC Operating Test Conditions
Output DQS valid window
Clock half period
Data hold skew factor
DQS write postamble time
Active to Read with Auto precharge
command
Autoprecharge write recovery +
Precharge time
(V
Input reference voltage for Clock
Input signal maximum peak swing
Input signal minimum slew rate (for imput only)
Input slew rate (I/O pins)
Input Levels(V
Input timing measurement reference level
Output timing measurement reference level
Output load condition
DD
=2.5V, V
Parameter
DDQ
IH
/V
=2.5V, T
IL
)
Parameter
A
= 0 to 70°C)
Output
Symbol
tWPST
tQHS
tRAP
tDAL
tQH
tHP
or tCHmin
(tWR/tCK)
(tRP/tCK)
(DDR333@CL=2.5))
tCLmin
Output Load Circuit (SSTL_2)
-tQHS
AC operating test conditions
Min
tHP
0.4
18
+
Z0=50Ω
B3
C
Max
0.55
LOAD
0.6
-
-
=30pF
V
(tWR/tCK)
or tCHmin
(tRP/tCK)
tt
(DDR266@CL=2.0)
tCLmin
=0.5*V
-tQHS
Min
tHP
0.4
20
+
A2
R
V
DDQ
T
REF
=50Ω
See Load Circuit
Max
0.75
0.6
-
-
V
=0.5*V
+0.31/V
0.5 * V
REF
Value
V
or tCHmin
(tWR/tCK)
(tRP/tCK)
1.5
0.5
0.5
(DDR266@CL=2.5))
V
REF
tCLmin
-tQHS
DDQ
tt
Min
tHP
0.4
20
DDQ
+
REF
B0
-0.31
Max
0.75
0.6
-
-
or tCHmin
(tWR/tCK)
(tRP/tCK)
(DDR200@CL=2.0))
tCLmin
Rev. 1.1 May. 2004
-tQHS
Min
tHP
0.4
20
+
A0
DDR SDRAM
V/ns
V/ns
Unit
V
V
V
V
V
Max
0.8
0.6
-
-
Unit
tCK
tCK
ns
ns
ns
Note
10, 11
Note
13
11
11
2