KMM5322200C2W SAMSUNG [Samsung semiconductor], KMM5322200C2W Datasheet
KMM5322200C2W
Related parts for KMM5322200C2W
KMM5322200C2W Summary of contents
Page 1
... DRAM MODULE 2Mx32 DRAM SIMM (1MX16 Base) Revision 0.0 November 1997 - 1 - KMM5322200C2W/C2WG Rev. 0.0 (Nov. 1997) ...
Page 2
... DRAM MODULE Revision History Version 0.0 (November 1997) • Changed module PCB from 6-Layer to 4-Layer. • Changed Module Part No. from KMM5322200CW/CWG to KMM5322200C2W/C2WG caused by PCB revision . KMM5322200C2W/C2WG - 2 - Rev. 0.0 (Nov. 1997) ...
Page 3
... SOJ packages mounted on a 72-pin glass-epoxy substrate. A 0.1 or 0.22uF decoupling capacitor is mounted on the printed circuit board for each DRAM. The KMM5322200C2W is a Single In-line Memory Module with edge connections and is intended for mounting into 72 pin edge connector sockets. PERFORMANCE RANGE ...
Page 4
... LCAS DQ5 DQ6 DQ7 DQ8 UCAS DQ9 DQ10 DQ11 DQ12 OE DQ13 DQ14 A0-A9 W DQ15 Vcc .1 or .22uF Capacitor for each DRAM Vss - 4 - KMM5322200C2W/C2WG DQ0 RAS DQ1 U2 DQ2 DQ3 DQ4 CAS0 LCAS DQ5 DQ6 DQ7 DQ8 CAS1 UCAS DQ9 DQ10 DQ11 DQ12 OE DQ13 ...
Page 5
... LCAS or UCAS cycling : =min =min) RC Vcc+0.5V, all other pins not under test Vcc) OUT = -5mA) = 4.2mA) and I , address can be changed maximum once while RAS=V CC1 CC3 - 5 - KMM5322200C2W/C2WG Rating - +7.0 -55 to +150 Min Typ Max 4.5 5.5 5 ...
Page 6
... RRH t 10 WCH RWL t 13 CWL REF t 0 WCS t 5 CSR t 10 CHR t 5 RPC t CPA - 6 - KMM5322200C2W/C2WG Min Max Max Min Max 110 10K 60 10K 15 60 ...
Page 7
... WRH (max) RAC 10. t (max) limit, then RCD t . CAC KMM5322200C2W/C2WG -5 -6 Max Min Max 40 10 200K 60 200K non-restrictive operating parameter included in WCS the data sheet as electrical characteristic s only (min), the cycle is an early write cycle and the ...
Page 8
... RAS t CSH CRP t RCD t RAD t t RAH ASC t CAH ROW COLUMN ADDRESS t RCS CLZ t RAC OPEN - 8 - KMM5322200C2W/C2WG CRP t RSH t CAS t RAL t RRH t OFF CAC DATA-OUT Rev. 0.0 (Nov. 1997) t RCH Don t care Undefined ...
Page 9
... IH A ADDRESS RAS t CSH CRP t RCD t RAD t t RAH ASC t CAH ROW COLUMN ADDRESS t CWL t RWL t WCS t WCH DATA- KMM5322200C2W/C2WG CRP t RSH t CAS t RAL Rev. 0.0 (Nov. 1997) Don t care Undefined ...
Page 10
... CAH COLUMN COLUMN ADDRESS ADDRESS RCS RCH RCS t CAC OFF t RAC t CLZ t CLZ VALID DATA-OUT - 10 - KMM5322200C2W/C2WG RHCP RSH t CAS t t ASC CAH ¡ó COLUMN ADDRESS ¡ó RCS RCH ¡ó CAC CAC ...
Page 11
... ADDRESS t WCS t WCH t WCS CWL CWL VALID VALID DATA-IN DATA- KMM5322200C2W/C2WG t t RHCP RSH t CAS ¡ó ASC CAH ¡ó COLUMN ADDRESS ¡ó t WCS t t WCH WCH ¡ó ...
Page 12
... NOTE : OE Don't care RAS CAS RAS t RAH RPC CSR t CHR t t WRP WRH t OFF - 12 - KMM5322200C2W/C2WG RPC RAS RP t RPC OPEN Rev. 0.0 (Nov. 1997) t CRP Don t care Undefined ...
Page 13
... RAS t t RCD RSH t RAD t t RAH ASC t CAH ROW COLUMN ADDRESS t RCS CAC t CLZ t RAC OPEN - 13 - KMM5322200C2W/C2WG RAS t CHR t WRH t WRP t RRH t OFF DATA-OUT Rev. 0.0 (Nov. 1997) Don t care Undefined ...
Page 14
... RAS CRP t t RCD RSH t RAD t t RAH ASC t CAH ROW COLUMN ADDRESS t t WCS WCH DATA- KMM5322200C2W/C2WG RAS t CHR t WRH t WRP Don t care Undefined Rev. 0.0 (Nov. 1997) ...
Page 15
... NOTE : This timing diagram is applied to all devices besides 16M DRAM 4th & 64M DRAM. t RAS t CPT t CHR t ASC COLUMN ADDRESS t t WRH RCS t CLZ t WRH t WCS t DS OPEN - 15 - KMM5322200C2W/C2WG RSH t CAS t RAL t CAH t RRH RCH CAC DATA-OUT t RWL t CWL t ...
Page 16
... CAS RASS t RPC CSR t OFF t t WRP WRH RAS t RPC CSR t CHR t t WTS WTH t OFF - 16 - KMM5322200C2W/C2WG t RPS t RPC t CHS OPEN RPC OPEN Don t care Undefined Rev. 0.0 (Nov. 1997) ...
Page 17
... Gold & Solder Plating Lead .010(.25)MAX .050(1.27) Tolerances : .005(.13) unless otherwise specified NOTE : The used device is 1Mx16 DRAM DRAM Part No. : KMM5322200C2W/C2WG -- KM416C1200CJ (400 mil) Revision History Rev 0.0 : Nov. 1997 4.250(107.95) 3.984(101.19) R.062(1.57) .125 DIA .002(3.18 .051) R.062 .004(R1.57 .10) ...