KMM5364003BSW SAMSUNG [Samsung semiconductor], KMM5364003BSW Datasheet

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KMM5364003BSW

Manufacturer Part Number
KMM5364003BSW
Description
4M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V
Manufacturer
SAMSUNG [Samsung semiconductor]
Datasheet
DRAM MODULE
GENERAL DESCRIPTION
The Samsung KMM5364003B is a 4Mx36bits Dynamic RAM
high density memory module. The Samsung KMM5364003B
consists of two CMOS 4Mx16bits and one CMOS Quad CAS
4Mx4bits DRAMs in TSOP packages mounted on a 72-pin
glass-epoxy substrate. A 0.1 or 0.22uF decoupling capacitor
is mounted on the printed circuit board for each DRAM. The
KMM5364003B is a Single In-line Memory Module with edge
connections and is intended for mounting into 72 pin edge
connector sockets.
PERFORMANCE RANGE
PIN CONFIGURATIONS
KMM5364003BSW/BSWG Fast Page Mode
4M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V
Pin
Speed
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
1
2
3
4
5
6
7
8
9
-5
-6
Symbol
DQ18
DQ19
DQ20
DQ21
DQ22
DQ23
DQ24
DQ25
RAS2
DQ26
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
DQ8
V
Vcc
A10
A11
Vcc
NC
NC
A0
A1
A2
A3
A4
A5
A6
A7
A8
A9
SS
50ns
60ns
t
RAC
Pin
37
38
39
40
41
42
43
44
45
46
47
48
49
50
51
52
53
54
55
56
57
58
59
60
61
62
63
64
65
66
67
68
69
70
71
72
13ns
15ns
t
CAC
Symbol
DQ17
DQ35
CAS0
CAS2
CAS3
CAS1
RAS0
DQ27
DQ10
DQ28
DQ11
DQ29
DQ12
DQ30
DQ13
DQ31
DQ32
DQ14
DQ33
DQ15
DQ34
DQ16
DQ9
PD1
PD2
PD3
PD4
Vss
Vcc
Vss
NC
NC
NC
NC
NC
W
110ns
90ns
t
RC
35ns
40ns
t
PC
SAMSUNG ELECTRONICS CO., LTD. reserves the right to
change products and specifications without notice.
FEATURES
• Part Identification
• Fast Page Mode Operation
• CAS-before-RAS & Hidden Refresh capability
• RAS-only refresh capability
• TTL compatible inputs and outputs
• Single +5V 10% power supply
• JEDEC standard PDpin & pinout
• PCB : Height(1000mil), single sided component
PIN NAMES
PRESENCE DETECT PINS (Optional)
Pin Name
A0 - A11
DQ0 - 35
W
RAS0, RAS2
CAS0 - CAS3
PD1 -PD4
Vcc
Vss
NC
- KMM5364003BSW(4K cycles/64ms Ref, TSOP, Solder)
- KMM5364003BSWG(4K cycles/64ms Ref, TSOP, Gold)
PD1
PD2
PD3
PD4
Pin
KMM5364003BSW/BSWG
50NS
Vss
Vss
Vss
Function
Address Inputs
Data In/Out
Read/Write Enable
Row Address Strobe
Column Address Strobe
Presence Detect
Power(+5V)
Ground
No Connection
NC
60NS
Vss
NC
NC
NC

Related parts for KMM5364003BSW

KMM5364003BSW Summary of contents

Page 1

... Vss FEATURES • Part Identification - KMM5364003BSW(4K cycles/64ms Ref, TSOP, Solder) - KMM5364003BSWG(4K cycles/64ms Ref, TSOP, Gold) • Fast Page Mode Operation • CAS-before-RAS & Hidden Refresh capability • RAS-only refresh capability • TTL compatible inputs and outputs • Single +5V 10% power supply • ...

Page 2

... W A0-A11 RAS CAS0 CAS1 U1 CAS2 CAS3 W A0-A11 RAS 47 LCAS 47 U2 UCAS OE W A0-A11 Vcc 0.1 or 0.22uF Capacitor for each DRAM Vss KMM5364003BSW/BSWG DQ0 DQ0 DQ1 DQ1 DQ2 DQ2 DQ3 DQ3 DQ4 DQ4 DQ5 DQ5 DQ6 DQ6 DQ7 DQ7 DQ8 DQ9 DQ9 DQ10 ...

Page 3

... CAS cycling : =min =min) RC Vcc+0.5V, all other pins not under test Vcc) OUT = -5mA) = 4.2mA) and I , address can be changed maximum once while RAS=V CC1 CC3 KMM5364003BSW/BSWG Rating - +7.0 -55 to +125 Min Typ Max 4.5 5.5 5 ...

Page 4

... RRH t 10 WCH RWL t 13 CWL REF t 0 WCS t 5 CSR t 10 CHR t 5 RPC t CPA KMM5364003BSW/BSWG Min Max Max Min Max 110 10K 60 10K 15 60 ...

Page 5

... IL (min) and V (max) and (max) RAC 9. t (max) limit, then RCD t . CAC 10. KMM5364003BSW/BSWG -5 -6 Max Min Max 40 10 200K 60 200K 10 10 This parameter defines the time at which the output achieves the open circuit condition and is not referenced non-restrictive operating parameter ...

Page 6

... RAS t CSH t t RCD RSH t CAS t RAD t RAL t t RAH ASC t CAH COLUMN ADDRESS t RCS OEA t CAC t CLZ t RAC OPEN KMM5364003BSW/BSWG CRP t RCH t RRH t OFF t OEZ DATA-OUT Don t care Undefined ...

Page 7

... IH ROW A ADDRESS RAS t CSH t t RCD RSH t CAS t RAD t RAL t t RAH ASC t CAH COLUMN ADDRESS t CWL t RWL t WCS t WCH DATA-IN KMM5364003BSW/BSWG CRP Don t care Undefined ...

Page 8

... ROW A ADDRESS RAS t CSH t t RCD RSH t CAS t RAD t RAL t t RAH ASC t CAH COLUMN ADDRESS t CWL t RWL OED OEH DATA-IN KMM5364003BSW/BSWG CRP Don t care Undefined ...

Page 9

... I/ I/OL t RWC t RAS t t RCD RSH t CAS t RAD t ASC t CAH COLUMN ADDRESS t AWD t CWD t RWD t OEA t CLZ t CAC t OED RAC VALID DATA-OUT KMM5364003BSW/BSWG CSH t RWL t CWL OEZ VALID DATA-IN Don t care Undefined ...

Page 10

... COLUMN ADDRESS ADDRESS RCS RCH RCS t CAC t OEA OFF t RAC t CLZ t OEZ t CLZ VALID DATA-OUT KMM5364003BSW/BSWG RHCP RSH t CAS t t ASC CAH ¡ó COLUMN ADDRESS ¡ó RCS RCH ¡ó CAC CAC t ...

Page 11

... ADDRESS ADDRESS t WCS t WCH t t WCS CWL CWL VALID VALID DATA-IN DATA-IN KMM5364003BSW/BSWG RHCP RSH t CAS t t ASC CAH ¡ó COLUMN ADDRESS ¡ó t WCS t WCH WCH ¡ó ...

Page 12

... ASC COL. ADDR t CWL CWD t AWD t RWD t OEA t OED t CAC OEZ RAC t CLZ VALID VALID DATA-IN DATA-OUT KMM5364003BSW/BSWG t RSH t CRP t CAS t PRWC t RAL t CAH COL. ADDR t RWL t CWL CWD t AWD t CPWD t OEA t CAC t OED ...

Page 13

... CAS - BEFORE - RAS REFRESH CYCLE NOTE : OE Don t care RAS t RPC CAS RAS t RAH RAS t CSR t CHR t t WRP WRH t OFF KMM5364003BSW/BSWG RPC CRP RPC OPEN Don t care Undefined ...

Page 14

... RAS t t RCD RSH t RAD t t RAH ASC t CAH COLUMN ADDRESS t RCS t RRH OEA t CAC t CLZ t RAC OPEN KMM5364003BSW/BSWG RAS t CHR t WRH t WRP t OFF t OEZ DATA-OUT Don t care Undefined ...

Page 15

... ROW A ADDRESS RAS t t RCD RSH t RAD t t RAH ASC t CAH COLUMN ADDRESS t t WCS WCH DATA-IN KMM5364003BSW/BSWG RAS t CHR t WRH t WRP Don t care Undefined ...

Page 16

... NOTE : This timing diagram is applied to all devices besides 16M DRAM 4th & 64M DRAM. t RAS t CPT t CHR t ASC COLUMN ADDRESS t t WRH RCS t CLZ t WRH t WCS WRH RCS t AA DATA-OUT KMM5364003BSW/BSWG t RSH t CAS t RAL t CAH RCH CAC t OEA t OEZ DATA-OUT t RWL t CWL t WCH ...

Page 17

... NOTE : OE Don t care RAS t RPC CAS RASS t CSR t OFF t t WRP WRH RAS t CSR t CHR t t WTS WTH t OFF KMM5364003BSW/BSWG t RPS t RPC t CHS OPEN RPC OPEN Don t care Undefined ...

Page 18

... Front view ) ( Back view ) .050(1.27) .041 .004(1.04 .10) Tolerances : .005(.13) unless otherwise specified NOTE : The used device is 4Mx16 & Quad CAS 4Mx4 DRAM, TSOPII DRAM Part No. : KMM5364003BSW/BSWG -- KM416C4100BS & KM44C4003CS(300 mil) KMM5364003BSW/BSWG Units : Inches (millimeters) .400(10.16) .100(2.54) MAX 0.125 MIN (3.20MIN) ...

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