KMM372V803BK SAMSUNG [Samsung semiconductor], KMM372V803BK Datasheet
KMM372V803BK
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KMM372V803BK Summary of contents
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... Fast page mode cycle time, Symbol OUT stg (Voltage referenced to V Symbol (Recommended operating conditions unless otherwise noted) KMM372V803BK/BS Min Max 1080 - - 990 - 100 - 1080 - 990 - 630 - 540 - 30 - 1080 - 990 - 2 ...
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... DRAM MODULE CAPACITANCE ( 1MHz) A Item Input capacitance[A0, B0 A12] Input capacitance[W0, W2, OE0, OE2] Input capacitance[RAS0, RAS2] Input capacitance[CAS0, CAS4] Input/Output capacitance[DQ0 - 71] AC CHARACTERISTICS ( Test condition : V /V =2.2/0.7V Parameter Random read or write cycle time Read-modify-write cycle time Access time from RAS ...
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... DRAM MODULE AC CHARACTERISTICS ( Parameter CAS setup time(CAS-before-RAS refresh) CAS hold time(CAS-before-RAS refresh) RAS to CAS precharge time Access time from CAS precharge Fast page mode cycle time Fast page mode read-modify-write cycle time CAS precharge time(Fast page cycle) RAS pulse width(Fast page cycle) ...
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... DRAM MODULE READ CYCLE RAS CAS ASR RAS t CSH CRP t RCD t RAD t t RAH ASC t CAH ROW COLUMN ADDRESS ADDRESS t RCS CLZ t RAC OPEN KMM372V80(8)3BK/BS ...
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... DRAM MODULE WRITE CYCLE ( EARLY WRITE ) NOTE : D = OPEN OUT RAS CAS ASR ADDRESS RAS t CSH CRP t RCD t RAD t t RAH ASC t CAH ROW COLUMN ADDRESS t CWL t RWL ...
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... DRAM MODULE WRITE CYCLE ( OE CONTROLLED WRITE ) NOTE : D = OPEN OUT RAS CAS ASR ADDRESS RAS t CSH CRP t RCD t RAD t t RAH ASC t CAH ROW COLUMN ADDRESS t OED t DS ...
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... DRAM MODULE READ - MODIFY - WRTIE CYCLE RAS CRP CAS ASR ROW A ADDR I/ I/OL t RWC t RAS t t RCD RSH t CAS t RAD t t RAH ASC t CAH COLUMN ADDRESS t AWD t CWD t RWD ...
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... DRAM MODULE FAST PAGE READ CYCLE NOTE : D = OPEN OUT RAS CRP CAS ASR ROW A ADDR RASP ¡ó RCD t CAS t CAS t RAD ¡ó t ASC ...
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... DRAM MODULE FAST PAGE WRITE CYCLE ( EARLY WRITE ) NOTE : D = OPEN OUT RAS CRP CAS ASR ROW A ADDR RASP RCD CAS t RAD t ASC t CSH ...
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... DRAM MODULE FAST PAGE READ - MODIFY - WRITE CYCLE RAS RCD CAS RAD t ASR ROW A ADDR I/ I/OL t CSH t CAS t RAH t CAH t ASC COL. ADDR t RCS t CWL CWD t AWD t RWD ...
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... DRAM MODULE RAS - ONLY REFRESH CYCLE NOTE : W, OE Don t care OPEN OUT RAS CRP CAS ASR ROW A ADDR CAS - BEFORE - RAS REFRESH CYCLE NOTE : OE Don t care RAS CAS ...
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... DRAM MODULE HIDDEN REFRESH CYCLE ( READ ) RAS CRP CAS ASR ADDRESS RAS t t RCD RSH t RAD t t RAH ASC t CAH ROW COLUMN ADDRESS t RCS CAC ...
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... DRAM MODULE HIDDEN REFRESH CYCLE ( WRITE ) NOTE : D = OPEN OUT RAS CAS ASR ADDRESS RAS CRP t t RCD RSH t RAD t t RAH ASC t CAH ROW COLUMN ADDRESS ...
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... DRAM MODULE CAS-BEFORE-RAS REFRESH COUNTER TEST CYCLE RAS CSR CAS READ CYCLE t WRP WRITE CYCLE t WRP READ-MODIFY-WRITE t WRP ...
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... DRAM MODULE CAS - BEFORE - RAS SELF REFRESH CYCLE NOTE : OE Don t care RAS CAS TEST MODE IN CYCLE NOTE : OE Don t care RAS CAS ...
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... Detail A Tolerances : .005(.13) unless otherwise specified The used device is 8Mx8 DRAM with Fast Page mode, SOJ or TSOPII. DRAM Part No. : KMM372V803BK/BS - KM48V8100BK, KM48V8100BS. KMM372V883BK/BS - KM48V8000BK, KM48V8000BS. 5.250 (133.350) 5.014 (127.350) B 0.250 0.250 (6 ...