DMN3025LFG DIODES [Diodes Incorporated], DMN3025LFG Datasheet - Page 2

• Manufacturer Part Number: DMN3025LFG
• Description: 30V N-CHANNEL ENHANCEMENT MODE MOSFET
• Manufacturer: DIODES [Diodes Incorporated]

Maximum Ratings
Thermal Characteristics
Electrical Characteristics
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 5) V
Maximum Continuous Body Diode Forward Current (Note 5)
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
Avalanche Current (Note 6) L = 0.1mH
Avalanche Energy (Note 6) L = 0.1mH
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Thermal Resistance, Junction to Case
Operating and Storage Temperature Range
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
Total Gate Charge (V
Total Gate Charge (V
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Reverse Recovery Time
Reverse Recovery Charge
Notes:
POWERDI is a registered trademark of Diodes Incorporated.
DMG3025LFG
Document number: DS35642 Rev. 4 – 2
5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
6. I
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
AR
and E
AR
GS
rating are based on low frequency and duty cycles to keep T
GS
Characteristic
= 10V)
= 4.5V)
(@T
Characteristic
Characteristic
A
= +25°C, unless otherwise specified.)
GS
= 10V
(@T
A
= +25°C, unless otherwise specified.)
Steady
t<10s
State
Symbol
R
T
T
T
T
BV
V
DS (ON)
t
t
I
I
C
|Y
V
C
C
www.diodes.com
A
A
A
A
GS(th)
Q
Q
D(on)
D(off)
GSS
DSS
R
Q
Q
Q
t
t
SD
oss
t
DSS
iss
rss
rr
gd
= +25°C
= +70°C
= +25°C
= +70°C
fs
gs
r
f
rr
g
g
g
|
Steady State
T
T
A
A
2 of 6
t < 10s
= +25°C
= +70°C
J
Min
= +25°C
0.8
30
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Symbol
0.70
11.6
17.9
Typ
605
1.5
5.3
2.4
3.8
4.1
4.7
5.5
2.6
V
V
14
23
74
58
—
—
—
—
E
9
2
I
I
Symbol
DSS
GSS
DM
T
I
I
I
AR
D
D
AR
S
J,
R
R
P
T
θ JC
θ JA
D
STG
Max
2.0
1.0
±1
18
28
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
1
-
Unit
mΩ
nC
nC
μA
μA
pF
Ω
ns
ns
V
V
S
V
-55 to 150
Value
Value
±20
2.0
1.3
6.4
7.5
6.1
7.8
2.5
61
37
30
10
60
14
10
V
V
V
V
V
V
V
V
V
f = 1.0MHz
V
V
V
R
I
F
GS
DS
GS
DS
GS
GS
DS
GS
DS
DS
DS
DD
L
= 12A, di/dt = 500A/μs
= 2.4Ω, R
= 0V, I
= 30V, V
= ±20V, V
= V
= 10V, I
= 4.5V, I
= 10V, I
= 0V, I
= 15V, V
= 0V, V
= 15V, I
= 15V, V
GS
DMN3025LFG
Test Condition
, I
D
S
GS
D
D
D
D
= 6.3A
G
= 250μA
D
GS
GS
GS
= 250μA
= 7.8A
= 7.8A
= 7.8A
DS
= 7.0A
= 1Ω,
= 0V, f = 1.0MHz
© Diodes Incorporated
= 0V
= 0V,
= 4.5V,
November 2012
= 0V
Units
Units
°C/W
mJ
°C
W
V
V
A
A
A
A
A