SR401 Polyfet RF Devices, SR401 Datasheet

SR401

Manufacturer Part Number

SR401

Description

TO-3P

Manufacturer

Polyfet RF Devices

Datasheets

1.SR401.pdf (2 pages)

2.SR401.pdf (2 pages)

Specifications of SR401

Date_code

10+

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Meier Automation Equipment Co., Limited

Part Number:

SR401

Manufacturer:

POLYFET

Quantity:

20 000

Current page: 1 of 2
Download datasheet (40Kb)

low feedback and output capacitances

resulting in high F transistors with high

input impedance and high efficiency.

for broadband RF applications.

Suitable for Militry Radios,

Cellular and Paging Amplifier Base

Stations, Broadcast FM/AM, MRI,

Laser Driver and others.

transistors designed specifically

General Description

SYMBOL

Total

Device

Dissipation

"Polyfet" process features

Silicon VDMOS and LDMOS

Gps

VSWR

Idss

Igss

Vgs

Rdson

Idsat

Ciss

Crss

Coss

Bvdss

465

1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com

Watts

Zero Bias Drain Current

PARAMETER

Common Source Power Gain

Drain Efficiency

Load Mismatch Tolerance

PARAMETER

Drain Breakdown Voltage

Gate Leakage Current

Gate Bias for Drain Current

Forward Transconductance

Saturation Resistance

Saturation Current

Common Source Input Capacitance

Common Source Feedback Capacitance

Common Source Output Capacitance

Junction to

Case Thermal

Resistance

polyfet rf devices

0.35 C/W

Maximum

Junction

Temperature

RF CHARACTERISTICS ( 300.0

ELECTRICAL CHARACTERISTICS ( EACH SIDE )

ABSOLUTE MAXIMUM RATINGS ( T =

200

-65 C to 150 C

Storage

Temperature

POLYFET RF DEVICES

MIN

300.0

200.0

42.00

TYP

0.16

15.0

7.2

DC Drain

Current

20:1

MAX

27.0

6.0

WATTS OUTPUT )

SILICON GATE ENHANCEMENT MODE

Relative

UNITS

Ohm

Mho

Amp

RF POWER

25 C )

HIGH EFFICIENCY, LINEAR

Drain to

Gate

Voltage

HIGH GAIN, LOW NOISE

TEST CONDITIONS

Idq =

Idq = 1.20

TEST CONDITIONS

300.0

Vds =

Vds = 0V Vgs = 30V

Ids =

Vds = 10V, Vgs = 5V

Vgs = 20V, Ids =

Vgs = 20V, Vds = 10V

Vds =

Ids =

Package Style

1.20

120.00

0.60

REVISION 10/08/2001

VDMOS

28.0

Watts

28.0

A, Vds =

A, Vgs = Vds

V, Vgs = 0V

Vgs = 0V, F = 1 MHz

mA, Vgs = 0V

Drain to

Source

Voltage

Push - Pull

15.00

TRANSISTOR

28.0

SR401

V, F =

Gate to

Source

Voltage

175

MHz

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