LH532000B SHARP [Sharp Electrionic Components], LH532000B Datasheet
LH532000B
Manufacturer Part Number
LH532000B
Description
CMOS 2M (256K x 8/128K x 16) MROM
Manufacturer
SHARP [Sharp Electrionic Components]
Datasheet
1.LH532000B.pdf
(7 pages)
LH532000B
FEATURES
DESCRIPTION
ROM with two programmable memory organizations,
byte and word modes. It is fabricated using silicon-gate
CMOS process technology.
The LH532000B is a 2M-bit mask-programmable
262,144 words
131,072 words
BYTE input pin selects bit configuration
Access times: 120/150 ns (MAX.)
Low-power consumption:
Programmable OE/OE and OE
Static operation
TTL compatible I/O
Three-state outputs
Single +5 V power supply
Packages:
16 word-wide pinout
(Byte mode)
(Word mode)
Operating: 275 mW (MAX.)
Standby: 550 W (MAX.)
40-pin, 600-mil DIP
40-pin, 525-mil SOP
48-pin, 12
18 mm
8 bit organization
16 bit organization
2
TSOP (Type I)
1
/OE
1
/DC
CMOS 2M (256K
PIN CONNECTIONS
40-PIN DIP
40-PIN SOP
Figure 1. Pin Connections for DIP and
OE
1
/OE
OE/OE
1
GND
/DC
D
CE
D
A
D
D
D
D
D
A
A
A
A
A
A
A
D
10
11
7
6
4
3
2
1
0
0
8
9
2
3
5
1
SOP Packages
10
12
13
14
15
16
17
18
19
20
11
8
2
3
4
5
6
7
9
1
8/128K
40
30
29
28
27
23
22
39
48
37
36
35
34
33
32
31
26
25
24
21
A
A
A
BYTE
GND
D
D
D
D
D
D
D
D
A
A
A
A
A
A
V
10
16
8
9
11
12
13
14
15
15
7
14
6
13
5
12
4
CC
/A
16) MROM
-1
(LSB)
TOP VIEW
532000B-1
1
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