ECH8 SANYO [Sanyo Semicon Device], ECH8 Datasheet

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ECH8

Manufacturer Part Number
ECH8
Description
N-Channel IGBT Light-Controlling Flash Applications
Manufacturer
SANYO [Sanyo Semicon Device]
Datasheet
1.ECH8.pdf (7 pages)

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Ordering number : ENA1381A
TIG058E8
Features
Specifi cations
Absolute Maximum Ratings at Ta=25°C
* : Concerning dv / dt (slope of Collector Voltage at the time of Turn-OFF), dv / dt > 400V / μs will be 100% screen-detected in the circuit shown as Fig. 1.
Package Dimensions
unit : mm (typ)
7011A-004
Collector-to-Emitter Voltage
Gate-to-Emitter Voltage (DC)
Gate-to-Emitter Voltage (Pulse)
Collector Current (Pulse)
Maximum Collector-to-Emitter dv / dt
Channel Temperature
Storage Temperature
•
•
•
•
Low-saturation voltage
Enhansment type
Mounting Height 0.9mm, Mounting Area 8.12mm
Halogen free compliance
1
8
Parameter
0.65
Bot t om View
Top View
2.9
5
4
0.3
1 : Emitter
2 : Emitter
3 : Emitter
4 : Gate
5 : Collector
6 : Collector
7 : Collector
8 : Collector
SANYO : ECH8
0.15
V CES
V GES
V GES
I CP
dV CE / dt
Tch
Tstg
Symbol
TIG058E8-TL-H
0 t o 0.02
N-Channel IGBT
Light-Controlling Flash Applications
http://semicon.sanyo.com/en/network
SANYO Semiconductors
PW≤1ms
C M =150μF, V GE =4V
V CE ≤320V, starting Tch=25°C
2
Product & Package Information
• Package
• JEITA, JEDEC
• Minimum Packing Quantity : 3000 pcs./reel
Packing Type: TL
Electrical Connection
•
•
•
Low voltage drive (4V)
Built-in Gate-to-Emitter protection diode
dv / dt guarantee*
Conditions
8
1
TL
7
2
60612 TKIM/D1008PJ MSIM TC-00001783
6
3
DATA SHEET
5
4
: ECH8
: -
Marking
LOT No.
Ratings
ZB
-40 to +150
400
150
400
150
±6
±8
No. A1381-1/7
V / μs
Unit
°C
°C
A
V
V
V

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ECH8 Summary of contents

Page 1

... Top View 2.9 0. 0.65 0 Emitter 2 : Emitter 3 : Emitter 4 : Gate 5 : Collector 6 : Collector 7 : Collector 8 : Collector SANYO : ECH8 Bot t om View SANYO Semiconductors N-Channel IGBT Light-Controlling Flash Applications Low voltage drive (4V) • Built-in Gate-to-Emitter protection diode • guarantee* • Symbol Conditions V CES V GES V GES PW≤ ...

Page 2

... V CE =320V =0V I GES V GE =±6V = (off =10V =1mA V CE (sat =100A =4V Cies Coes V CE =10V, f=1MHz Cres + V CC Package Shipping ECH8 3,000pcs./reel 200 V CE =10V 180 160 140 120 100 ...

Page 3

Gate-to-Emitter Voltage ...

Page 4

R G 1400 Fig.1 Switching test circuit 1200 1000 800 600 400 200 100 150 200 Gate Series Resistance Ω 450 400 350 300 250 ...

Page 5

Embossed Taping Specifi cation TIG058E8-TL-H TIG058E8 No. A1381-5/7 ...

Page 6

Outline Drawing TIG05E8-TL-H TIG058E8 Land Pattern Example Mass (g) Unit 0. For reference 0.65 Unit: mm 0.4 No. A1381-6/7 ...

Page 7

Note : TIG058E8 has protection diode between gate and emitter but handling it requires suffi cient care to be taken. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the ...

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